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DRV8300NIPWR

Texas Instruments

DRV8300NIPWR by Texas Instruments

DRV8300NIPWR by Texas Instruments is a MOSFET gate driver with a package style of small outline, thin profile, and shrink pitch. It operates b/w -40 to 125°C and has a max supply voltage of 20V. Ideal for automotive applications due to its high side driver output characteristics and half bridge based interface IC type.

Median Price

$1.000

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 17,448 parts In-Stock

1+ parts

$0.618

100+ parts

$0.475

1k+ parts

$0.250

10k+ parts

-

17,448

$0.618

$0.475

$0.250

-

Mouser Electronics

USA . 1,811 parts In-Stock

1+ parts

$1.000

100+ parts

$0.547

1k+ parts

$0.468

10k+ parts

$0.363

1,811

$1.000

$0.547

$0.468

$0.363

DigiKey

USA . 1,784 parts In-Stock

1+ parts

$1.650

100+ parts

$0.975

1k+ parts

$0.853

10k+ parts

-

1,784

$1.650

$0.975

$0.853

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,345 parts In-Stock

1+ parts

$0.312

100+ parts

-

1k+ parts

-

10k+ parts

-

2,345

$0.312

-

-

-

Digiode

USA . 4,956 parts In-Stock

1+ parts

$0.587

100+ parts

-

1k+ parts

-

10k+ parts

-

4,956

$0.587

-

-

-

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.879

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$0.879

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 7,048 parts In-Stock

1+ parts

$0.265

100+ parts

-

1k+ parts

-

10k+ parts

-

7,048

$0.265

-

-

-

Corphita

USA . 2,646 parts In-Stock

1+ parts

$0.556

100+ parts

-

1k+ parts

-

10k+ parts

-

2,646

$0.556

-

-

-

Continental Prestige Electronics

USA . 2,983 parts In-Stock

1+ parts

$0.879

100+ parts

-

1k+ parts

-

10k+ parts

$0.862

2,983

$0.879

-

-

$0.862

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.879

100+ parts

-

1k+ parts

$0.835

10k+ parts

$0.818

2,000

$0.879

-

$0.835

$0.818

Argo Parts USA

USA . 1,708 parts In-Stock

1+ parts

$0.879

100+ parts

-

1k+ parts

-

10k+ parts

-

1,708

$0.879

-

-

-

Parana Technologies

USA . 749 parts In-Stock

1+ parts

$7.213

100+ parts

-

1k+ parts

$7.714

10k+ parts

-

749

$7.213

-

$7.714

-

DigiPath Technology Company

USA . 286 parts In-Stock

1+ parts

$7.942

100+ parts

-

1k+ parts

-

10k+ parts

-

286

$7.942

-

-

-

ChromeModa Solutions

Germany . 2,936 parts In-Stock

1+ parts

$8.104

100+ parts

$6.645

1k+ parts

-

10k+ parts

-

2,936

$8.104

$6.645

-

-

IDEA Electronic Components Group

UK . 412 parts In-Stock

1+ parts

$8.104

100+ parts

-

1k+ parts

$7.294

10k+ parts

-

412

$8.104

-

$7.294

-

Corohmni

South Africa . 1,022 parts In-Stock

1+ parts

$13.842

100+ parts

-

1k+ parts

-

10k+ parts

-

1,022

$13.842

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 26,273 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

26,273

-

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Overview

Experience the power of innovation with the DRV8300NIPWR by Texas Instruments, a leading manufacturer in the industry. This MOSFET gate driver offers unmatched quality and reliability for a wide range of applications. With a compact design and superior performance, this product provides customers with exceptional value and benefits. Trust in Texas Instruments to deliver cutting-edge technology that exceeds expectations and enhances your projects. Elevate your designs with the DRV8300NIPWR and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good thermal properties and durability, making the product reliable for long-term use.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving space and reducing assembly time.

Maximum Supply Voltage-1: 20 V

Ability to handle high supply voltage levels allows for compatibility with a wide range of applications.

Minimum Supply Voltage-1: 5 V

Low minimum supply voltage requirement makes the product suitable for use in various low-power applications.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliability and stability under extreme environmental conditions.

Output Characteristics: PUSH-PULL

Push-pull output configuration ensures efficient switching and control of MOSFETs, improving overall system performance.

High Side Driver: YES

Presence of high-side driver capability allows for driving MOSFETs connected to high-side voltage, enhancing flexibility in circuit design.

Terminal Form: GULL WING

Gull wing terminal form provides reliable electrical connections and ease of soldering during assembly.

Nominal Output Peak Current Limit: 0.75 A

High output current limit allows for driving power MOSFETs with sufficient current capacity, ensuring optimal performance.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

Half-bridge based MOSFET driver interface offers efficient control and switching capabilities for driving power MOSFETs in various applications.

Technical Specifications

MOSFET Gate Drivers DRV8300NIPWR attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e4

Length:

6.5 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

PUSH-PULL

Nominal Output Peak Current Limit:

.75 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP20,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Maximum Supply Current:

1.4 mA

Minimum Supply Voltage:

5 V

Maximum Supply Voltage-1:

20 V

Minimum Supply Voltage-1:

5 V

Nominal Supply Voltage-1:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.03 us

Turn-on Time:

.03 us

Width:

4.4 mm

Trade Compliance

DRV8300NIPWR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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