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DRV8718SQRVJRQ1

Texas Instruments

DRV8718SQRVJRQ1 by Texas Instruments

DRV8718SQRVJRQ1 by Texas Instruments is a MOSFET gate driver with a max supply voltage of 37V and min operating temperature of -40°C. It features an output polarity of TRUE and is suitable for automotive applications due to its AEC-Q100 screening level. With a turn-on time of 0.85us, it provides efficient control in high-side driver configurations.

Median Price

$8.050

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,852 parts In-Stock

1+ parts

$8.050

100+ parts

$5.275

1k+ parts

$5.142

10k+ parts

-

2,852

$8.050

$5.275

$5.142

-

Mouser Electronics

USA . 1,644 parts In-Stock

1+ parts

$8.050

100+ parts

$5.280

1k+ parts

$4.950

10k+ parts

$4.600

1,644

$8.050

$5.280

$4.950

$4.600

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 550 parts In-Stock

1+ parts

$3.735

100+ parts

-

1k+ parts

-

10k+ parts

-

550

$3.735

-

-

-

Digiode

USA . 1,737 parts In-Stock

1+ parts

$6.061

100+ parts

-

1k+ parts

-

10k+ parts

-

1,737

$6.061

-

-

-

Vyrian

USA . 3,706 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,706

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 113 parts In-Stock

1+ parts

$3.475

100+ parts

-

1k+ parts

$4.001

10k+ parts

-

113

$3.475

-

$4.001

-

Continental Prestige Electronics

USA . 6,384 parts In-Stock

1+ parts

$3.735

100+ parts

-

1k+ parts

-

10k+ parts

$3.660

6,384

$3.735

-

-

$3.660

Argo Parts USA

USA . 2,077 parts In-Stock

1+ parts

$3.735

100+ parts

-

1k+ parts

-

10k+ parts

-

2,077

$3.735

-

-

-

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$3.735

100+ parts

$3.660

1k+ parts

-

10k+ parts

-

2,000

$3.735

$3.660

-

-

ChromeModa Solutions

Germany . 6,240 parts In-Stock

1+ parts

$3.905

100+ parts

$3.202

1k+ parts

-

10k+ parts

-

6,240

$3.905

$3.202

-

-

IDEA Electronic Components Group

UK . 1,588 parts In-Stock

1+ parts

$3.905

100+ parts

-

1k+ parts

$3.514

10k+ parts

-

1,588

$3.905

-

$3.514

-

Semicontronic

India . 3,782 parts In-Stock

1+ parts

$3.960

100+ parts

$3.861

1k+ parts

$3.841

10k+ parts

-

3,782

$3.960

$3.861

$3.841

-

Corohmni

South Africa . 92 parts In-Stock

1+ parts

$4.549

100+ parts

-

1k+ parts

-

10k+ parts

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92

$4.549

-

-

-

Corphita

USA . 3,499 parts In-Stock

1+ parts

$5.742

100+ parts

-

1k+ parts

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10k+ parts

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3,499

$5.742

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-

-

Ampacity Inc.

Singapore . 3,931 parts In-Stock

1+ parts

$8.620

100+ parts

-

1k+ parts

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10k+ parts

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3,931

$8.620

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-

-

Component Connect

USA . 11,873 parts In-Stock

1+ parts

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11,873

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A-Z Elektronik GmbH

Germany . 3,537 parts In-Stock

1+ parts

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3,537

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-

-

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Lixinc

USA . 2,408 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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2,408

-

-

-

-

DigiPath Technology Company

USA . 2,188 parts In-Stock

1+ parts

-

100+ parts

$3.521

1k+ parts

-

10k+ parts

-

2,188

-

$3.521

-

-

Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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500

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Overview

Unlock the full potential of your automotive applications with the DRV8718SQRVJRQ1 by Texas Instruments. This MOSFET Gate Driver offers unparalleled quality and reliability, backed by the trusted reputation of its manufacturer. From its high-side driver capability to its wide operating temperature range, this product delivers superior performance and efficiency. Trust in Texas Instruments to provide innovative solutions for your automotive needs, ensuring optimal functionality and value for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material makes the package durable and lightweight, ideal for automotive applications where weight and durability are important.

Surface Mount: YES

Being surface mountable makes the installation of this MOSFET gate driver easy and efficient, saving time and effort during assembly.

Maximum Supply Voltage: 37 V

With a high maximum supply voltage, this gate driver can handle a wide range of power requirements, making it versatile for various applications.

Minimum Supply Voltage: 4.9 V

The low minimum supply voltage requirement ensures that this gate driver can operate efficiently even in low-power situations, improving overall performance.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows this gate driver to function reliably in automotive environments where temperature fluctuations are common.

Output Characteristics: OPEN-DRAIN

The open-drain output characteristics make this gate driver compatible with a wide range of MOSFET configurations, offering flexibility in design and implementation.

High Side Driver: YES

Having a high side driver capability enables this MOSFET gate driver to control both high-side and low-side MOSFETs, expanding its range of applications.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this gate driver meets stringent automotive standards for performance and reliability, ensuring optimal operation in automotive systems.

Technical Specifications

MOSFET Gate Drivers DRV8718SQRVJRQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

S-PQCC-N56

JESD-609 Code:

e4

Length:

8 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

56

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-DRAIN

Nominal Output Peak Current Limit:

.062 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC56,.31SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Maximum Supply Current:

15.5 mA

Maximum Supply Voltage:

37 V

Minimum Supply Voltage:

4.9 V

Nominal Supply Voltage:

13.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.6 us

Turn-on Time:

.85 us

Width:

8 mm

Trade Compliance

DRV8718SQRVJRQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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