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UCC27323DGNG4

Texas Instruments

UCC27323DGNG4 by Texas Instruments

UCC27323DGNG4 by Texas Instruments is a MOSFET gate driver with 2 functions, operating at supply voltages b/w 4.5V to 15V. It features a small outline package style, totem-pole output characteristics, and an inverted output polarity. Ideal for automotive applications due to its BICMOS technology and dual terminal position.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,771 parts In-Stock

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Digiode

USA . 3,116 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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One Stop Electronics

USA . 1,585 parts In-Stock

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$5.500

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$5.500

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Corohmni

South Africa . 262 parts In-Stock

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$7.172

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262

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Parana Technologies

USA . 1,329 parts In-Stock

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$10.396

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$10.910

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$10.396

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ChromeModa Solutions

Germany . 5,215 parts In-Stock

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$11.681

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$9.578

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$11.681

$9.578

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IDEA Electronic Components Group

UK . 1,644 parts In-Stock

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$11.681

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$11.097

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$10.513

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$10.513

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AZTECH Wire

Italy . 857 parts In-Stock

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$18.294

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Ampacity Inc.

Singapore . 1,221 parts In-Stock

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$48.500

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Continental Prestige Electronics

USA . 4,678 parts In-Stock

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Corphita

USA . 3,294 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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DigiPath Technology Company

USA . 822 parts In-Stock

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$10.532

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Argo Parts USA

USA . 181 parts In-Stock

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Overview

Enhance your electronic designs with the UCC27323DGNG4 from Texas Instruments, a top-tier manufacturer known for their high-quality products. As a MOSFET gate driver, this component offers unparalleled performance and reliability in a wide range of applications. With its advanced features and innovative design, this driver provides exceptional value to customers by delivering efficient power management and precise control. Trust Texas Instruments to elevate your projects to the next level with the UCC27323DGNG4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protects the internal components of the MOSFET gate driver, ensuring reliable operation.

Surface Mount: YES

Being surface mountable makes the installation process easier and more efficient, saving time and effort.

Maximum Supply Voltage: 15 V

The high maximum supply voltage allows for versatile application in various circuits without the risk of damage due to voltage spikes.

No. of Functions: 2

Having multiple functions in a single MOSFET gate driver helps in simplifying the circuit design and reducing the component count.

Package Shape: SQUARE

The square package shape ensures easy placement and alignment of the MOSFET gate driver on the circuit board, optimizing space utilization.

Power Supplies (V): 4.5/15

The range of power supply voltages supported allows flexibility in operating the MOSFET gate driver in different scenarios.

No. of Terminals: 8

Having 8 terminals provides ample connectivity options and compatibility with various circuit configurations.

Minimum Supply Voltage: 4.5 V

The low minimum supply voltage ensures that the MOSFET gate driver can operate efficiently even in low-power scenarios.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this MOSFET gate driver can withstand harsh environmental conditions and prolonged use.

Output Characteristics: TOTEM-POLE

The totem-pole output configuration enables high efficiency and fast switching speeds in driving MOSFETs, enhancing overall performance.

Technical Specifications

MOSFET Gate Drivers UCC27323DGNG4 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

Input Characteristics:

STANDARD

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

TOTEM-POLE

Nominal Output Peak Current Limit:

4 A

Output Polarity:

INVERTED

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

4.5/15

Qualification:

Not Qualified

Maximum Seated Height:

1.07 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

.45 mA

Maximum Supply Voltage:

15 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

14 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD SILVER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.05 us

Turn-on Time:

.04 us

Width:

3 mm

Trade Compliance

UCC27323DGNG4 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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