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SNJ55462JG

Texas Instruments

SNJ55462JG by Texas Instruments

SNJ55462JG by Texas Instruments is a MILITARY-grade peripheral driver with 2 functions, operating at -55 to 125 °C. It has a max supply voltage of 5.5 V and can handle up to 0.4 A output current flow. Ideal for applications requiring INVERTED output polarity and NAND GATE BASED interface IC type.

Median Price

$155.040

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

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DigiKey

USA . 1 parts In-Stock

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Rochester

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$10.080

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$9.020

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$8.490

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Freelance Electronics

USA . 39 parts In-Stock

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$8.469

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$8.893

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Digiode

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American Microsemiconductor Inc.

USA . 50 parts In-Stock

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Vyrian

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Corel Iberica Componentes, S.L.

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LIBRA Elektronik GmbH

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ComSIT Distribution GmbH

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Electronic Expediters

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MISTER SPROCKETS

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Bristol Electronics

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Atlantic Semiconductor

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Semi Source

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A2Z Electronics, Inc.

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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Mil-Aero Solutions, Inc.

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Microfarads

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North Shore Components

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LWI Electronics Inc

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Sinequanon

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Corphita

USA . 3,777 parts In-Stock

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$8.730

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Parana Technologies

USA . 375 parts In-Stock

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$9.693

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$10.275

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ChromeModa Solutions

Germany . 4,926 parts In-Stock

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$10.891

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$8.931

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IDEA Electronic Components Group

UK . 728 parts In-Stock

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$10.891

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$9.802

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QUARKTWIN TECHNOLOGY LTD

USA . 14,052 parts In-Stock

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Assy Fe

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A-Z Elektronik GmbH

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DigiPath Technology Company

USA . 1,726 parts In-Stock

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Kepictronics

USA . 1,426 parts In-Stock

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Overview

Enhance your electronic projects with the SNJ55462JG by Texas Instruments, a top-quality peripheral driver designed to meet the highest industry standards. With a MIL-PRF-38535 screening level and military-grade technology, this versatile component offers reliability and precision in a compact package. Perfect for applications requiring inverted output polarity and standard input characteristics, this product provides seamless integration and optimal performance. Trust Texas Instruments to deliver cutting-edge solutions that exceed expectations and elevate your designs to the next level.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Provides durability and reliability, suitable for military applications

Maximum Supply Voltage: 5.5 V

Can handle a wide range of supply voltages

No. of Functions: 2

Allows for multiple functions to be controlled by one driver

Screening Level: MIL-PRF-38535

Ensures high quality and reliability, meeting military standards

Maximum Operating Temperature: 125 °C

Can operate in high temperature environments

Output Characteristics: OPEN-COLLECTOR

Allows for easy interfacing with other components

Maximum Output Current: 0.4 A

Can drive high current loads

Nominal Supply Voltage: 5 V

Standard voltage supply for many applications

Driver No. of Bits: 2

Provides binary control for connected functions

Interface IC Type: NAND GATE BASED PERIPHERAL DRIVER

Uses NAND logic for efficient and reliable operation

Technical Specifications

Peripheral Drivers SNJ55462JG attributes and parameters. Explore more Peripheral Drivers devices from Texas Instruments

Specs

Driver No. of Bits:

2

Input Characteristics:

STANDARD

JESD-30 Code:

R-CDIP-T8

JESD-609 Code:

e0

Length:

9.6 mm

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-COLLECTOR

Output Current Flow Direction:

SINK

Maximum Output Current:

.4 A

Nominal Output Peak Current Limit:

.5 A

Output Polarity:

INVERTED

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

5.08 mm

Sub-Category:

Peripheral Drivers

Maximum Supply Current:

76 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.065 us

Turn-on Time:

.05 us

Width:

7.62 mm

Trade Compliance

SNJ55462JG Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-101-9600, 5962011019600

NIIN

011019600

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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