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SNJ55452BJG

Texas Instruments

SNJ55452BJG by Texas Instruments

SNJ55452BJG by Texas Instruments is a MILITARY-grade peripheral driver with 2 functions, operating at temperatures from -55 to 125 °C. It has an inverted output polarity, open-collector output characteristics, and a max supply voltage of 5.5 V. Ideal for applications requiring NAND GATE BASED PERIPHERAL DRIVER interface ICs in military environments.

Median Price

$31.567

Lifecycle Status

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Chip1Stop

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Freelance Electronics

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NAC Semi

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Digiode

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Sunrise Surplus Inc.

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Manoshevitz Elec. Sales

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Mil-Aero Solutions, Inc.

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Parana Technologies

USA . 1,003 parts In-Stock

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DigiPath Technology Company

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ChromeModa Solutions

Germany . 6,865 parts In-Stock

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IDEA Electronic Components Group

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Corphita

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Overview

Looking for top-quality peripheral drivers? Look no further than the SNJ55452BJG by Texas Instruments. With a MIL-PRF-38535 screening level and military-grade temperature grade, this rectangular in-line package is designed to meet the most rigorous standards. Perfect for applications requiring inverted output polarity and sink current flow direction, this product offers reliability and performance. Trust Texas Instruments to deliver cutting-edge technology and superior products that provide value and benefits to our customers. Elevate your projects with the SNJ55452BJG today!

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package body provides durability and protection for the internal components, ensuring reliable performance in various environmental conditions.

Maximum Supply Voltage: 5.5 V

With a high maximum supply voltage of 5.5V, this peripheral driver can accommodate a wide range of power supply inputs, making it versatile for different applications.

No. of Functions: 2

Having 2 functions in a single device allows for efficient use of space and resources, making this peripheral driver a cost-effective solution for applications requiring multiple functions.

Temperature Grade: MILITARY

Designed for military-grade applications, this peripheral driver meets stringent performance and reliability requirements, making it suitable for demanding environments.

Output Characteristics: OPEN-COLLECTOR

The open-collector output allows for flexibility in interfacing with other components, making it compatible with a wide range of circuits and devices.

Input Characteristics: STANDARD

With standard input characteristics, this peripheral driver is easy to integrate into existing systems, reducing compatibility issues and simplifying the design process.

Technical Specifications

Peripheral Drivers SNJ55452BJG attributes and parameters. Explore more Peripheral Drivers devices from Texas Instruments

Specs

Driver No. of Bits:

2

Input Characteristics:

STANDARD

JESD-30 Code:

R-GDIP-T8

JESD-609 Code:

e0

Length:

9.58 mm

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-COLLECTOR

Output Current Flow Direction:

SINK

Maximum Output Current:

.4 A

Nominal Output Peak Current Limit:

.5 A

Output Polarity:

INVERTED

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

5.08 mm

Sub-Category:

Peripheral Drivers

Maximum Supply Current:

71 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.035 us

Turn-on Time:

.035 us

Width:

7.62 mm

Trade Compliance

SNJ55452BJG Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-030-2478, 5962010302478, 5962-01-110-2824, 5962011102824, 5962-01-171-5415, 5962011715415, 5962-01-322-3938, 5962013223938

NIIN

010302478, 011102824, 011715415, 013223938

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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