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SNJ55464JG

Texas Instruments

SNJ55464JG by Texas Instruments

SNJ55464JG by Texas Instruments is a NOR gate based peripheral driver with 2 functions, operating at 5V. It features open-collector output characteristics and can handle up to 0.5A peak current limit. Ideal for military-grade applications requiring fast turn-on/off times and sink current flow direction.

Median Price

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Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Vyrian

USA . 6,289 parts In-Stock

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Digiode

USA . 501 parts In-Stock

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Inland Empire Components Inc.

USA . 183 parts In-Stock

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Semi Source

USA . 40 parts In-Stock

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Electronics Depot

USA . 21 parts In-Stock

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Electronic Expediters

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Electro Mavin

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Resion

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Parana Technologies

USA . 1,886 parts In-Stock

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$3.985

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$4.452

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DigiPath Technology Company

USA . 2,324 parts In-Stock

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$4.387

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$4.036

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IDEA Electronic Components Group

UK . 149 parts In-Stock

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$4.477

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$4.029

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ChromeModa Solutions

Germany . 27 parts In-Stock

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$4.477

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$3.671

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AZTECH Wire

Italy . 335 parts In-Stock

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One Stop Electronics

USA . 1,596 parts In-Stock

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Lixinc

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Authorized Procurement Solutions

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Corphita

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Overview

Experience superior quality and reliability with the SNJ55464JG from Texas Instruments, a leading manufacturer in the industry. This high-performance peripheral driver offers unmatched value with its dual functions, open-collector output characteristics, and military-grade temperature grade. Ideal for a variety of applications, this compact rectangular package is perfect for projects requiring precise control and efficient power management. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations. Elevate your design with the SNJ55464JG today.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides durability and protection, making the product long-lasting and reliable.

Maximum Supply Voltage: 5.5 V

Can handle a higher supply voltage, offering flexibility in different circuit configurations.

No. of Functions: 2

Offers versatility with multiple functions in a single device.

Package Shape: RECTANGULAR

Compact and space-saving design for easy integration into circuit layouts.

Output Characteristics: OPEN-COLLECTOR

Allows for easy interfacing with other components in the circuit.

Maximum Operating Temperature: 125 °C

Can operate in high-temperature environments, suitable for demanding applications.

Technology: BIPOLAR

Provides efficient and reliable performance in various electronic circuits.

Nominal Output Peak Current Limit: 0.5 A

Offers a high output peak current limit for driving external devices.

Interface IC Type: NOR GATE BASED PERIPHERAL DRIVER

Utilizes NOR gate technology for efficient signal processing and control.

Output Current Flow Direction: SINK

Allows for sinking current, suitable for driving external loads such as LEDs or relays.

Technical Specifications

Peripheral Drivers SNJ55464JG attributes and parameters. Explore more Peripheral Drivers devices from Texas Instruments

Specs

Driver No. of Bits:

2

Input Characteristics:

STANDARD

JESD-30 Code:

R-GDIP-T8

Length:

9.6 mm

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-COLLECTOR

Output Current Flow Direction:

SINK

Nominal Output Peak Current Limit:

.5 A

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

5.08 mm

Sub-Category:

Peripheral Drivers

Maximum Supply Current:

85 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.065 us

Turn-on Time:

.05 us

Width:

7.62 mm

Trade Compliance

SNJ55464JG Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-131-7032, 5962011317032, 5962-01-037-6373, 5962010376373, 5962-01-251-7080, 5962012517080, 5962-01-394-0346, 5962013940346

NIIN

011317032, 010376373, 012517080, 013940346

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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