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SNJ55452BFK

Texas Instruments

SNJ55452BFK by Texas Instruments

SNJ55452BFK by Texas Instruments is a MILITARY-grade peripheral driver with 2 functions, operating at -55 to 125 °C. It has a max supply voltage of 5.5 V and output current flow direction is SINK. Ideal for applications requiring inverted output polarity and fast turn-on/off times.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,606 parts In-Stock

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Digiode

USA . 4,367 parts In-Stock

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Electronic Expediters

USA . 100 parts In-Stock

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Bristol Electronics

USA . 85 parts In-Stock

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Prism Electronics

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Parana Technologies

USA . 292 parts In-Stock

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$5.952

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$6.733

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292

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$6.733

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DigiPath Technology Company

USA . 644 parts In-Stock

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$6.554

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$6.030

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ChromeModa Solutions

Germany . 6,194 parts In-Stock

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$6.688

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$5.484

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$5.484

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IDEA Electronic Components Group

UK . 212 parts In-Stock

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$6.688

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$6.019

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AZTECH Wire

Italy . 736 parts In-Stock

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$13.333

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One Stop Electronics

USA . 497 parts In-Stock

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$14.500

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Corphita

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Kepictronics

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Overview

Enhance your electronic designs with the Texas Instruments SNJ55452BFK Peripheral Driver. Crafted with precision using top-quality materials, this chip carrier package features two functions in a compact square shape. Ideal for military-grade applications, this inverted output driver ensures reliable performance in extreme temperatures. With a maximum supply voltage of 5.5V and open-collector output characteristics, this innovative technology offers fast turn-on and turn-off times. Trust Texas Instruments to deliver cutting-edge solutions that exceed expectations. Elevate your projects with the SNJ55452BFK and experience unparalleled quality and reliability.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic, metal-sealed cofired package body material ensures durability and reliability, making this peripheral driver suitable for various applications.

Surface Mount: YES

Being surface mountable makes installation and assembly of this peripheral driver easier and more efficient.

Maximum Supply Voltage: 5.5 V

With a high maximum supply voltage, this peripheral driver can work with a wide range of input voltages, providing flexibility in power supply options.

No. of Functions: 2

Having multiple functions in a single peripheral driver allows for efficient use of space and resources in electronic circuits.

Screening Level: MIL-PRF-38535

Meeting MIL-PRF-38535 screening level ensures high reliability and quality standards, making this peripheral driver suitable for demanding military applications.

Technical Specifications

Peripheral Drivers SNJ55452BFK attributes and parameters. Explore more Peripheral Drivers devices from Texas Instruments

Specs

Driver No. of Bits:

2

Input Characteristics:

STANDARD

JESD-30 Code:

S-CQCC-N20

JESD-609 Code:

e0

Length:

8.89 mm

No. of Functions:

2

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-COLLECTOR

Output Current Flow Direction:

SINK

Maximum Output Current:

.4 A

Nominal Output Peak Current Limit:

.5 A

Output Polarity:

INVERTED

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

LCC20,.35SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

2.03 mm

Sub-Category:

Peripheral Drivers

Maximum Supply Current:

71 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.035 us

Turn-on Time:

.035 us

Width:

8.89 mm

Trade Compliance

SNJ55452BFK Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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