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SNJ54S182J

Texas Instruments

SNJ54S182J by Texas Instruments

SNJ54S182J by Texas Instruments is a 4-bit digital arithmetic circuit with a propagation delay of 10.5 ns, ideal for military applications. Operating b/w -55 to 125 °C, it has a supply voltage range of 4.5V to 5.5V and max power supply current of 99mA, making it suitable for high-performance computing systems.

Median Price

$9.668

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

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Freelance Electronics

USA . 140 parts In-Stock

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$9.668

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$10.151

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Vyrian

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Digiode

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Electronic Expediters

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Resion

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Bristol Electronics

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Holdelec - ElecDif-Pro

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Mil-Aero Solutions, Inc.

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PC Components Company LLC

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PAR Electronics

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Prism Electronics

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Microfarads

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MISTER SPROCKETS

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ComSIT Distribution GmbH

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Odi Ramu Company

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ECAB

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First Choice Components Inc.

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Electronics Depot

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One Stop Electronics

USA . 1,309 parts In-Stock

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AZTECH Wire

Italy . 276 parts In-Stock

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Parana Technologies

USA . 367 parts In-Stock

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DigiPath Technology Company

USA . 2,302 parts In-Stock

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IDEA Electronic Components Group

UK . 2,116 parts In-Stock

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ChromeModa Solutions

Germany . 476 parts In-Stock

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A-Z Elektronik GmbH

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Corphita

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Microchip USA

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Overview

Unleash the power of digital arithmetic circuits with the SNJ54S182J by Texas Instruments. Known for their cutting-edge technology and high-quality manufacturing, Texas Instruments delivers top-of-the-line products that exceed expectations. Ideal for military-grade applications, this component offers fast propagation delay, true output polarity, and a wide operating temperature range. Elevate your projects with the reliability and efficiency that only Texas Instruments can provide. Experience the difference with the SNJ54S182J today.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides durability and resistance to high temperatures, making the product suitable for harsh environments.

No. of Bits: 4

Having a 4-bit digital arithmetic circuit allows for basic arithmetic operations and is suitable for simple calculations.

Nominal Supply Voltage / Vsup (V): 5

A 5V supply voltage ensures stable and efficient operation of the circuit.

Propagation Delay (tpd): 10.5 ns

With a low propagation delay, the circuit can quickly process data and provide fast results.

Temperature Grade: MILITARY

Designed to meet military standards, ensuring reliability and performance in challenging environments.

Technical Specifications

Digital Arithmetic Circuits SNJ54S182J attributes and parameters. Explore more Digital Arithmetic Circuits devices from Texas Instruments

Specs

Additional Features:

WITH HIGHER ORDER LOOKAHEAD

Family:

S

JESD-30 Code:

R-CDIP-T16

JESD-609 Code:

e0

Length:

19.56 mm

Load Capacitance (CL):

15 pF

No. of Bits:

4

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Polarity:

TRUE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Maximum Power Supply Current (ICC):

99 mA

Propagation Delay (tpd):

10.5 ns

Qualification:

Not Qualified

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

5.08 mm

Sub-Category:

Arithmetic Circuits

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

SNJ54S182J Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-103-0606, 5962011030606, 5962-01-142-9260, 5962011429260, 5962-01-102-1634, 5962011021634, 5962-01-168-3376, 5962011683376, 5962-01-297-6061, 5962012976061

NIIN

011030606, 011429260, 011021634, 011683376, 012976061

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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