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SNJ54LVT8980AW

Texas Instruments

SNJ54LVT8980AW by Texas Instruments

SNJ54LVT8980AW by Texas Instruments is a MILITARY-grade MICROPROCESSOR CIRCUIT with CMOS technology. It operates b/w -55 to 125 °C, with supply voltage range of 2.7V to 3.6V. This RECTANGULAR FLATPACK IC is ideal for applications requiring high reliability in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,720 parts In-Stock

1+ parts

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8,720

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Digiode

USA . 3,371 parts In-Stock

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3,371

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,115 parts In-Stock

1+ parts

$10.000

100+ parts

-

1k+ parts

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1,115

$10.000

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AZTECH Wire

Italy . 750 parts In-Stock

1+ parts

$11.614

100+ parts

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750

$11.614

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Parana Technologies

USA . 1,336 parts In-Stock

1+ parts

$17.383

100+ parts

-

1k+ parts

$17.589

10k+ parts

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1,336

$17.383

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$17.589

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DigiPath Technology Company

USA . 288 parts In-Stock

1+ parts

$19.140

100+ parts

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288

$19.140

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ChromeModa Solutions

Germany . 4,690 parts In-Stock

1+ parts

$19.531

100+ parts

$16.015

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4,690

$19.531

$16.015

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IDEA Electronic Components Group

UK . 1,535 parts In-Stock

1+ parts

$19.531

100+ parts

$18.554

1k+ parts

$17.578

10k+ parts

-

1,535

$19.531

$18.554

$17.578

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Corohmni

South Africa . 548 parts In-Stock

1+ parts

$31.159

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548

$31.159

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Corphita

USA . 4,277 parts In-Stock

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4,277

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Overview

Unlock the power of cutting-edge technology with the SNJ54LVT8980AW by Texas Instruments. Manufactured with precision and expertise, this high-quality microprocessor circuit offers unparalleled performance and reliability. Ideal for a wide range of applications, this product is designed to meet the demanding needs of military-grade projects. With a compact package style and advanced CMOS technology, customers can trust in the value and benefits that this product brings. Experience innovation at its finest with the SNJ54LVT8980AW.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This material combination provides good durability and reliability to the product, making it suitable for rugged environments.

Surface Mount: YES

Being surface mountable makes the product easy to integrate into circuit boards, saving space and simplifying the assembly process.

Maximum Supply Voltage: 3.6 V

The high maximum supply voltage provides flexibility in power input options and ensures compatibility with a wide range of systems.

Temperature Grade: MILITARY

The military-grade temperature ratings ensure that the product can operate reliably in extreme temperatures, making it suitable for harsh environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable in data processing.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs SNJ54LVT8980AW attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-GDFP-F

Length:

14.36 mm

No. of Terminals:

24

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DFP

Package Equivalence Code:

FL24,.35

Package Shape:

Package Style (Meter):

FLATPACK

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

2.29 mm

Sub-Category:

Other Microprocessor ICs

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

2.7 V

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

9.09 mm

Peripheral IC Type:

Trade Compliance

SNJ54LVT8980AW Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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