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SN74AUC14RGYRG4

Texas Instruments

SN74AUC14RGYRG4 by Texas Instruments

SN74AUC14RGYRG4 by Texas Instruments is a CMOS logic gate with 6 functions, 5.7 ns propagation delay, and 3-STATE output. It operates at a supply voltage of 1.2V, suitable for industrial applications requiring fast signal processing in compact spaces. This chip carrier package with a very thin profile is surface mountable and has a max operating temperature of 85°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,364 parts In-Stock

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Digiode

USA . 3,248 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 666 parts In-Stock

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$15.289

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$15.289

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Parana Technologies

USA . 757 parts In-Stock

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$16.122

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$16.450

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757

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DigiPath Technology Company

USA . 1,944 parts In-Stock

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$17.753

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$16.332

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$17.753

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ChromeModa Solutions

Germany . 4,781 parts In-Stock

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$18.115

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$14.854

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$14.854

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IDEA Electronic Components Group

UK . 791 parts In-Stock

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$18.115

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$17.209

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$16.304

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791

$18.115

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$16.304

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One Stop Electronics

USA . 305 parts In-Stock

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$46.000

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Microchip USA

USA . 4,279 parts In-Stock

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Corphita

USA . 52 parts In-Stock

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Overview

Elevate your electronic designs with the top-quality SN74AUC14RGYRG4 logic gate by Texas Instruments. This innovative product offers reliable performance and precision engineering, making it a superior choice for a wide range of applications. Whether you're working on industrial automation, consumer electronics, or telecommunications systems, this logic gate delivers exceptional value, efficiency, and versatility. Trust Texas Instruments to provide cutting-edge solutions that exceed expectations and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the logic gates.

Propagation Delay At Nominal Supply: 5.7 ns

Low propagation delay ensures fast and efficient operation of the logic gates.

Surface Mount: YES

Easy to mount on PCBs, saving space and simplifying the assembly process.

No. of Functions: 6

Offers versatility and flexibility in designing circuits with multiple logic functions.

Nominal Supply Voltage / Vsup (V): 1.2

Operates at a standard voltage level, making it compatible with a wide range of systems.

Load Capacitance (CL): 15 pF

Optimized for handling capacitance loads within the specified range.

Output Characteristics: 3-STATE

Allows for three output states, enhancing the functionality and performance of the logic gates.

Schmitt Trigger: YES

Incorporates Schmitt trigger functionality for noise immunity and signal conditioning.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity.

Technical Specifications

Logic Gates SN74AUC14RGYRG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AUC

JESD-30 Code:

S-PQCC-N14

JESD-609 Code:

e4

Length:

3.5 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

9 Amp

Moisture Sensitivity Level (MSL):

2

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC14/18,.14SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2/2.5

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

5.7 ns

Propagation Delay (tpd):

5.7 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

2.7 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.5 mm

Trade Compliance

SN74AUC14RGYRG4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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