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SN74ACT7802-25FN

Texas Instruments

SN74ACT7802-25FN by Texas Instruments

SN74ACT7802-25FN by Texas Instruments is a FIFO chip with 1KX18 organization, 25 ns cycle time, and 40 MHz clock frequency. It operates synchronously at a supply voltage of 5V and is ideal for applications requiring fast data storage and retrieval in commercial-grade environments.

Median Price

$9.080

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 614 parts In-Stock

1+ parts

-

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$7.870

1k+ parts

$7.040

10k+ parts

$6.620

614

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$7.040

$6.620

DigiKey

USA . 614 parts In-Stock

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$9.080

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$9.080

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Verical

USA . 466 parts In-Stock

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$9.838

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$8.800

10k+ parts

$8.275

466

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$9.838

$8.800

$8.275

Distributors (In-Stock)

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Digiode

USA . 91 parts In-Stock

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$8.294

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Vyrian

USA . 7,019 parts In-Stock

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DigiKey Marketplace

USA . 614 parts In-Stock

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614

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Ashlea Components Ltd

UK . 47 parts In-Stock

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Electronic Expediters

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Prism Electronics

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Parana Technologies

USA . 427 parts In-Stock

1+ parts

$4.796

100+ parts

-

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$5.304

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427

$4.796

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$5.304

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DigiPath Technology Company

USA . 365 parts In-Stock

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$5.281

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$5.281

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ChromeModa Solutions

Germany . 6,855 parts In-Stock

1+ parts

$5.389

100+ parts

$4.419

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$5.389

$4.419

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IDEA Electronic Components Group

UK . 1,408 parts In-Stock

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$5.389

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$4.850

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$5.389

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$6.328

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$5.758

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$5.189

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$6.328

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$5.189

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Corphita

USA . 4,889 parts In-Stock

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$7.857

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Microchip USA

USA . 388 parts In-Stock

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Perfect Parts

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Overview

Experience seamless data storage and retrieval with the SN74ACT7802-25FN by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and reliability in all their products. The SN74ACT7802-25FN belongs to the FIFO category, offering fast cycle times and synchronous operation for efficient data handling. With a nominal supply voltage of 5V and 1Kx18 organization, this chip carrier package provides 1024 words of memory width. Whether used in industrial automation, telecommunications, or consumer electronics, this versatile FIFO device guarantees high performance and precision. Upgrade your system today with the SN74ACT7802-25FN for superior functionality and unbeatable value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the components inside the FIFO, ensuring a longer lifespan.

Cycle Time: 25 ns

The fast cycle time of 25 ns allows for quick and efficient data processing, making this FIFO ideal for high-speed applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with a wide range of systems and power sources.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this FIFO can function reliably in various environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this FIFO efficient and reliable for data storage and retrieval.

Memory Width: 18

Having a memory width of 18 bits allows for the storage and retrieval of larger chunks of data at a time, increasing efficiency.

Output Enable: YES

The output enable feature allows for control over when data is output from the FIFO, providing flexibility in data transmission.

Technical Specifications

FIFO SN74ACT7802-25FN attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

30 ns

Maximum Clock Frequency (fCLK):

40 MHz

Cycle Time:

25 ns

JESD-30 Code:

S-PQCC-J68

JESD-609 Code:

e4

Length:

24.23 mm

Memory Density:

18432 bit

Memory IC Type:

Memory Width:

18

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

68

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX18

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC68,1.0SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Sub-Category:

FIFOs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

24.23 mm

Trade Compliance

SN74ACT7802-25FN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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