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SN74ACT11NSR

Texas Instruments

SN74ACT11NSR by Texas Instruments

SN74ACT11NSR by Texas Instruments is a logic gate with 3 functions and inputs, featuring a propagation delay of 10.5 ns at 5V supply. This CMOS technology device operates in industrial temperature range (-40 to 85 °C) and is suitable for applications requiring fast signal processing in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,108 parts In-Stock

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4,108

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Vyrian

USA . 2,867 parts In-Stock

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2,867

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Distributors (Availability)

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AZTECH Wire

Italy . 225 parts In-Stock

1+ parts

$8.027

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225

$8.027

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Parana Technologies

USA . 683 parts In-Stock

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$8.668

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$9.345

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683

$8.668

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$9.345

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DigiPath Technology Company

USA . 2,214 parts In-Stock

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$9.544

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$8.781

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2,214

$9.544

$8.781

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ChromeModa Solutions

Germany . 1,596 parts In-Stock

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$9.739

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$7.986

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1,596

$9.739

$7.986

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IDEA Electronic Components Group

UK . 19 parts In-Stock

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$9.739

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$9.252

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$8.765

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19

$9.739

$9.252

$8.765

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One Stop Electronics

USA . 1,212 parts In-Stock

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$14.000

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Corphita

USA . 4,142 parts In-Stock

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Microchip USA

USA . 120 parts In-Stock

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Overview

Elevate your projects with the high-quality SN74ACT11NSR logic gates from Texas Instruments. Known for their reliable manufacturing standards, Texas Instruments delivers top-notch components that meet and exceed industry expectations. Ideal for a wide range of applications, these logic gates offer fast propagation delays, low power consumption, and superior performance. Whether you're working on a DIY electronics project or developing cutting-edge technology, the SN74ACT11NSR is the perfect choice for achieving optimal results. Trust Texas Instruments to provide you with the value, benefits, and advantages you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good durability and protection for the internal components of the logic gates.

Propagation Delay At Nominal Supply: 10.5 ns

Low propagation delay ensures fast signal processing and response times in the circuit.

Surface Mount: YES

Surface mount design allows for easy installation and integration onto circuit boards.

No. of Functions: 3

Having 3 functions in one component saves space and simplifies circuit design.

Package Shape: RECTANGULAR

Rectangular shape is easy to handle and fit in standard circuit layouts.

Nominal Supply Voltage / Vsup (V): 5

Operates at a common and stable voltage level of 5V.

Power Supplies (V): 5

Consistent power supply voltage of 5V ensures reliable performance.

Maximum Operating Temperature: 85 °C

Capable of operating at high temperatures, suitable for industrial environments.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity.

Technical Specifications

Logic Gates SN74ACT11NSR attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

ACT

JESD-30 Code:

R-PDSO-G14

Length:

10.2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Functions:

3

No. of Inputs:

3

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Propagation Delay At Nominal Supply:

10.5 ns

Propagation Delay (tpd):

10.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

5.3 mm

Trade Compliance

SN74ACT11NSR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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