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ONET2511PARGTT

Texas Instruments

ONET2511PARGTT by Texas Instruments

ONET2511PARGTT by Texas Instruments is an ATM/SONET/SDH circuit with a 3.3V supply voltage and 16 terminals in a square package shape. It operates b/w -40 to 85°C, suitable for industrial applications like SDH and SONET. This telecom IC supports circuits with a max supply current of 0.028mA and terminal pitch of 0.5mm.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,105 parts In-Stock

1+ parts

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3,105

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Digiode

USA . 563 parts In-Stock

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563

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,387 parts In-Stock

1+ parts

$12.893

100+ parts

-

1k+ parts

$13.378

10k+ parts

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1,387

$12.893

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$13.378

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ChromeModa Solutions

Germany . 1,980 parts In-Stock

1+ parts

$14.487

100+ parts

$11.879

1k+ parts

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1,980

$14.487

$11.879

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IDEA Electronic Components Group

UK . 650 parts In-Stock

1+ parts

$14.487

100+ parts

$13.763

1k+ parts

$13.038

10k+ parts

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650

$14.487

$13.763

$13.038

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AZTECH Wire

Italy . 646 parts In-Stock

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$15.210

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646

$15.210

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Component Stockers USA

USA . 781 parts In-Stock

1+ parts

$99.990

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781

$99.990

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One Stop Electronics

USA . 1,453 parts In-Stock

1+ parts

$461.000

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1,453

$461.000

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Corphita

USA . 2,933 parts In-Stock

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2,933

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Perfect Parts

USA . 874 parts In-Stock

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874

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DigiPath Technology Company

USA . 632 parts In-Stock

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$13.061

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632

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$13.061

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Microchip USA

USA . 120 parts In-Stock

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120

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Overview

Experience high-quality performance with the ONET2511PARGTT by Texas Instruments, a leading manufacturer in the industry. This versatile ATM/SONET/SDH circuit offers reliable solutions for SDH and SONET applications. With a low nominal supply voltage of 3.3V and minimal supply current, this product provides exceptional value and efficiency to customers. Trust in Texas Instruments for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic body material provides durability and protection to the internal components of the circuit, ensuring its longevity.

Surface Mount: YES

Surface mount design allows for easy and efficient integration onto circuit boards, saving space and simplifying assembly processes.

Power Supplies (V): 3.3

Operates efficiently and effectively at a standard voltage of 3.3V, making it compatible with a wide range of systems.

Maximum Operating Temperature: 85 °C

Capable of operating at high temperatures up to 85°C, ensuring reliability and performance in various environmental conditions.

Applications: SDH; SONET

Specifically designed to support SDH and SONET technologies, making it ideal for telecommunications networks requiring high-speed data transmission.

Technical Specifications

ATM/SONET/SDH Circuits ONET2511PARGTT attributes and parameters. Explore more ATM/SONET/SDH Circuits devices from Texas Instruments

Specs

Applications:

SDH; SONET

JESD-30 Code:

S-PQCC-N16

JESD-609 Code:

e4

Length:

3 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC16,.12SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

ATM/SONET/SDH ICs

Maximum Supply Current:

.028 mA

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

ONET2511PARGTT Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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