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ONET1130EPRSMR

Texas Instruments

ONET1130EPRSMR by Texas Instruments

ONET1130EPRSMR by Texas Instruments is a 32-terminal ATM/SONET/SDH transceiver chip carrier with a very thin profile. Operating at -40 to 100°C, it has a supply voltage of 2.5V and max current of 185mA. Ideal for SONET applications, this IC features nickel/palladium/gold terminal finish and quad position terminals.

Median Price

$22.875

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 16,009 parts In-Stock

1+ parts

$22.875

100+ parts

$20.333

1k+ parts

$14.951

10k+ parts

-

16,009

$22.875

$20.333

$14.951

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 574 parts In-Stock

1+ parts

$21.731

100+ parts

-

1k+ parts

-

10k+ parts

-

574

$21.731

-

-

-

Vyrian

USA . 3,312 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,312

-

-

-

-

Cyclops Electronics Ltd

UK . 2 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 339 parts In-Stock

1+ parts

$7.237

100+ parts

$672.110

1k+ parts

$6.514

10k+ parts

-

339

$7.237

$672.110

$6.514

-

DigiPath Technology Company

USA . 933 parts In-Stock

1+ parts

$7.969

100+ parts

$7.332

1k+ parts

-

10k+ parts

-

933

$7.969

$7.332

-

-

IDEA Electronic Components Group

UK . 1,659 parts In-Stock

1+ parts

$8.132

100+ parts

-

1k+ parts

$7.319

10k+ parts

-

1,659

$8.132

-

$7.319

-

ChromeModa Solutions

Germany . 678 parts In-Stock

1+ parts

$8.132

100+ parts

$6.668

1k+ parts

-

10k+ parts

-

678

$8.132

$6.668

-

-

AZTECH Wire

Italy . 447 parts In-Stock

1+ parts

$11.390

100+ parts

-

1k+ parts

-

10k+ parts

-

447

$11.390

-

-

-

Corphita

USA . 1,755 parts In-Stock

1+ parts

$20.588

100+ parts

-

1k+ parts

-

10k+ parts

-

1,755

$20.588

-

-

-

Futuretech Components

Singapore . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Overview

Experience the superior quality and reliability of Texas Instruments with the ONET1130EPRSMR. Designed for ATM/SONET/SDH circuits, this innovative product offers unmatched performance and versatility. Perfect for SONET applications, this telecom IC type transceiver provides customers with a seamless solution for their networking needs. With a wide range of operating temperatures and a compact design, the ONET1130EPRSMR delivers exceptional value and efficiency for any project. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and lightweight design, making the product suitable for various applications.

Surface Mount: YES

Enables easy and efficient installation onto circuit boards, saving time and effort during assembly.

Temperature Grade: INDUSTRIAL

Ensures reliable performance in industrial environments with varying temperature conditions.

Telecom IC Type: ATM/SONET/SDH TRANSCEIVER

Specifically designed for SONET applications, offering high-speed data transmission and connectivity capabilities.

Technical Specifications

ATM/SONET/SDH Circuits ONET1130EPRSMR attributes and parameters. Explore more ATM/SONET/SDH Circuits devices from Texas Instruments

Specs

Applications:

SONET

JESD-30 Code:

S-PQCC-N32

JESD-609 Code:

e4

Length:

4 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC32,.16SQ,16

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Maximum Supply Current:

185 mA

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4 mm

Trade Compliance

ONET1130EPRSMR Telecommunications trade compliance attributes, and parameters.

ECCN

5A991.B.1

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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