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LM4832M

Texas Instruments

LM4832M by Texas Instruments

Texas Instruments' LM4832M is a CMOS audio control IC with 2 channels. It offers 90 dB channel separation and 10% harmonic distortion. Ideal for tone control circuits in industrial applications, it operates b/w -40 to 85°C with a supply voltage range of 4.5-5.5V.

Median Price

$5.000

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

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DF Sales Co.

USA . 21 parts In-Stock

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$5.000

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DF Sales Co.

USA . 21 parts In-Stock

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Vyrian

USA . 7,713 parts In-Stock

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Digiode

USA . 2,315 parts In-Stock

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Anansix

USA . 300 parts In-Stock

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ComSIT Distribution GmbH

Germany . 69 parts In-Stock

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ComSIT USA

USA . 69 parts In-Stock

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Zilex Electronics Inc.

Canada . 18 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 2,025 parts In-Stock

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$1.530

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$2.186

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$1.530

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DigiPath Technology Company

USA . 2,283 parts In-Stock

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$1.685

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$1.550

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ChromeModa Solutions

Germany . 3,031 parts In-Stock

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$1.719

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$1.410

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IDEA Electronic Components Group

UK . 1,243 parts In-Stock

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$1.547

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One Stop Electronics

USA . 1,154 parts In-Stock

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$10.800

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AZTECH Wire

Italy . 523 parts In-Stock

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$12.902

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Kepictronics

USA . 5,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,662 parts In-Stock

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Corphita

USA . 3,972 parts In-Stock

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Authorized Procurement Solutions

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Overview

Enhance your audio experience with the LM4832M by Texas Instruments, a top-tier manufacturer known for delivering high-quality audio control ICs. This small outline package is perfect for applications in tone control circuits, offering exceptional channel separation and low harmonic distortion to elevate your sound output. With a wide operating temperature range and dual terminal position, this versatile IC provides reliable performance in industrial settings. Upgrade your audio systems with the LM4832M and enjoy superior sound quality and seamless integration for all your audio needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of PLASTIC/EPOXY material makes the product lightweight and durable, suitable for portable devices.

Channel Separation: 90 dB

High channel separation ensures clear and distinct sound quality, providing a better audio experience.

Harmonic Distortion: 10%

Low harmonic distortion of 10% ensures minimal distortion in the audio output, resulting in high fidelity sound.

No. of Terminals: 28

Having 28 terminals allows for versatile connectivity options and integration with other components in audio systems.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, the product can withstand extended periods of use without overheating.

Technology: CMOS

The CMOS technology used in the product offers low power consumption and high noise immunity, making it efficient and reliable.

Technical Specifications

Audio Control ICs LM4832M attributes and parameters. Explore more Audio Control ICs devices from Texas Instruments

Specs

Additional Features:

MICROPHONE PREAMPLIFIER STAGE IS ALSO AVAILABLE

Channel Separation:

90 dB

General IC Type:

Harmonic Distortion:

10 %

JESD-30 Code:

R-PDSO-G28

JESD-609 Code:

e0

Length:

17.9 mm

Moisture Sensitivity Level (MSL):

2

No. of Bands:

2

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP28,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

220

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Sub-Category:

Audio/Video Amplifiers

Maximum Supply Current:

21 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn85Pb15)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7.5 mm

Trade Compliance

LM4832M General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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