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LM3S9L97-IQC80-C1T

Texas Instruments

LM3S9L97-IQC80-C1T by Texas Instruments

LM3S9L97-IQC80-C1T by Texas Instruments is a 32-bit microcontroller with 131072 ROM words and 49152 RAM bytes. It operates at a max clock frequency of 16.384 MHz, suitable for industrial applications requiring ADC and DMA channels, as well as PWM functionality.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,408 parts In-Stock

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4,408

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Vyrian

USA . 2,915 parts In-Stock

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2,915

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Distributors (Availability)

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AZTECH Wire

Italy . 394 parts In-Stock

1+ parts

$12.985

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394

$12.985

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One Stop Electronics

USA . 1,005 parts In-Stock

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$35.000

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1,005

$35.000

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Parana Technologies

USA . 772 parts In-Stock

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$49.593

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772

$49.593

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DigiPath Technology Company

USA . 1,696 parts In-Stock

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$54.609

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1,696

$54.609

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ChromeModa Solutions

Germany . 2,610 parts In-Stock

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$55.723

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$45.693

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2,610

$55.723

$45.693

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IDEA Electronic Components Group

UK . 93 parts In-Stock

1+ parts

$55.723

100+ parts

$52.937

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$50.151

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93

$55.723

$52.937

$50.151

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Corphita

USA . 934 parts In-Stock

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934

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Microchip USA

USA . 300 parts In-Stock

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Overview

Unlock the power of innovation with the Texas Instruments LM3S9L97-IQC80-C1T microcontroller. As a leading manufacturer in the industry, Texas Instruments ensures quality and reliability in every product they create. This microcontroller is versatile, offering a wide range of applications in various industries. With its advanced features and efficient design, this microcontroller provides unmatched performance and value to customers. Experience seamless integration and superior functionality with the LM3S9L97-IQC80-C1T microcontroller from Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the microcontroller, making it durable and long-lasting.

Surface Mount: YES

Ease of installation and space-saving design for compact electronic devices.

Maximum Supply Voltage: 1.32 V

Efficient power consumption with a relatively low maximum supply voltage.

Bit Size: 32

High processing capability with a 32-bit architecture.

Power Supplies (V): 1.2, 3.3

Versatile power supply options for different applications.

No. of Terminals: 100

Sufficient connectivity options for interfacing with various components.

Package Style (Meter): FLATPACK

Compact design for space-constrained circuit layouts.

Minimum Supply Voltage: 1.08 V

Allows for operation at low power levels.

Maximum Operating Temperature: 85 °C

Suitable for industrial environments with moderate temperature ranges.

Minimum Operating Temperature: -40 °C

Wide operating temperature range for versatility in different environments.

ADC Channels: YES

Analog-to-digital conversion capabilities for interfacing with analog sensors or signals.

DMA Channels: YES

Direct Memory Access channels for efficient data transfer and processing.

Terminal Position: QUAD

Quad terminal layout for easy soldering and board mounting.

ROM Words: 131072

Large ROM capacity for storing program instructions and data.

Maximum Seated Height: 1.6 mm

Low-profile design for compact device assembly.

Width: 14 mm

Compact form factor for space-efficient PCB layouts.

Maximum Clock Frequency: 16.384 MHz

High clock frequency for fast processing and response times.

Length: 14 mm

Square package shape for uniform dimensions and easy mounting.

Temperature Grade: INDUSTRIAL

Designed to operate reliably in industrial temperature conditions.

Peripheral IC Type: MICROCONTROLLER

Integrated microcontroller functionality for standalone operation.

RAM Bytes: 49152

Ample random access memory for data storage and manipulation.

Technology: CMOS

CMOS technology for low power consumption and high noise immunity.

Terminal Form: GULL WING

Gull wing terminal form for easy soldering and reliable connections.

Nominal Supply Voltage: 1.2 V

Standard supply voltage for stable and efficient operation.

PWM Channels: YES

Pulse width modulation channels for precise control of output signals.

ROM Programmability: FLASH

Flash ROM for reprogrammability and flexibility in firmware updates.

Terminal Pitch: 0.5 mm

Fine terminal pitch for high-density mounting on PCBs.

Speed: 80 rpm

Operates at a speed of 80 revolutions per minute for specific applications.

No. of I/O Lines: 60

Sufficient input/output lines for interfacing with external devices and peripherals.

Technical Specifications

Microcontrollers LM3S9L97-IQC80-C1T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

16.384 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G100

Length:

14 mm

No. of I/O Lines:

60

No. of Terminals:

100

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

1.2,3.3

Qualification:

Not Qualified

RAM Bytes:

49152

ROM Words:

131072

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

80 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

1.32 V

Minimum Supply Voltage:

1.08 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

14 mm

Peripheral IC Type:

Trade Compliance

LM3S9L97-IQC80-C1T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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