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LM3S9DN5-IQC80-A2T

Texas Instruments

LM3S9DN5-IQC80-A2T by Texas Instruments

LM3S9DN5-IQC80-A2T by Texas Instruments is a 32-bit microcontroller with 72 I/O lines, 149mA max supply current, and 16.384MHz clock frequency. Ideal for industrial applications requiring a robust Cortex-M3 CPU, ADC/DMA channels, and FLASH ROM programmability in a compact flatpack package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,217 parts In-Stock

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Digiode

USA . 2,553 parts In-Stock

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One Stop Electronics

USA . 486 parts In-Stock

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$7.000

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486

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AZTECH Wire

Italy . 819 parts In-Stock

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$19.788

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Parana Technologies

USA . 1,566 parts In-Stock

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$74.752

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DigiPath Technology Company

USA . 1,229 parts In-Stock

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$82.311

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$75.726

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ChromeModa Solutions

Germany . 1,610 parts In-Stock

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$83.991

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$68.873

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IDEA Electronic Components Group

UK . 445 parts In-Stock

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$83.991

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$79.791

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$75.592

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445

$83.991

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QUARKTWIN TECHNOLOGY LTD

USA . 7,833 parts In-Stock

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Microchip USA

USA . 5,760 parts In-Stock

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Corphita

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Overview

Experience the unmatched quality and reliability of Texas Instruments with the LM3S9DN5-IQC80-A2T microcontroller. This powerful device offers endless possibilities in various applications, providing customers with exceptional value and performance. With advanced features like ADC channels, DMA channels, and PWM channels, this microcontroller is perfect for industrial-grade projects that require high-speed processing and low power consumption. Trust Texas Instruments to deliver cutting-edge technology that exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the microcontroller, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and simplifying the manufacturing process.

Maximum Supply Voltage: 3.6 V

Allows for versatility in power supply options, accommodating a wide range of applications.

Package Shape: SQUARE

Optimal design for efficient space utilization on circuit boards.

Bit Size: 32

Provides high processing power and efficiency for complex tasks and calculations.

No. of Terminals: 100

Offers ample connectivity options for interfacing with other components and peripherals.

Minimum Operating Temperature: -45 °C

Allows for reliable operation in extreme cold environments.

ADC Channels: YES

Enables analog-to-digital conversion for precise measurement and control applications.

DMA Channels: YES

Facilitates direct memory access for efficient data transfer and processing.

ROM Words: 524288

Offers ample storage capacity for program memory, allowing for complex applications and features.

Maximum Clock Frequency: 16.384 MHz

Provides high-speed processing capability for demanding tasks and real-time applications.

Technology: CMOS

Provides low power consumption and high noise immunity, ideal for battery-powered devices.

PWM Channels: YES

Enables pulse-width modulation for precise control of motors, lights, and other devices.

Technical Specifications

Microcontrollers LM3S9DN5-IQC80-A2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

CPU Family:

CORTEX-M3

Maximum Clock Frequency:

16.384 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G100

Length:

14 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

72

No. of Terminals:

100

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-45 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.3,3.3

Qualification:

Not Qualified

RAM Bytes:

98304

ROM Words:

524288

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

80 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

149 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Peripheral IC Type:

Trade Compliance

LM3S9DN5-IQC80-A2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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