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LM3S9B90-IBZ80-C3

Texas Instruments

LM3S9B90-IBZ80-C3 by Texas Instruments

LM3S9B90-IBZ80-C3 by Texas Instruments is a 32-bit microcontroller with 262144 ROM words and 98304 RAM bytes. It operates at a max clock frequency of 0.032 MHz, suitable for industrial applications requiring ADC and DMA channels, as well as PWM functionality. With a package style of GRID ARRAY and terminal pitch of 0.8 mm, it offers versatile connectivity options in a compact form factor.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,023 parts In-Stock

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Digiode

USA . 651 parts In-Stock

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AZTECH Wire

Italy . 261 parts In-Stock

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$6.052

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One Stop Electronics

USA . 464 parts In-Stock

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$28.000

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Parana Technologies

USA . 1,327 parts In-Stock

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$75.464

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DigiPath Technology Company

USA . 784 parts In-Stock

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$83.095

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$76.448

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784

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ChromeModa Solutions

Germany . 2,359 parts In-Stock

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$84.791

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$69.529

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$84.791

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IDEA Electronic Components Group

UK . 1,659 parts In-Stock

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$84.791

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$80.551

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$76.312

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QUARKTWIN TECHNOLOGY LTD

USA . 7,476 parts In-Stock

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Kepictronics

USA . 860 parts In-Stock

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Corphita

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Microchip USA

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Overview

Unlock endless possibilities with the Texas Instruments LM3S9B90-IBZ80-C3 microcontroller! Manufactured by a trusted industry leader, this cutting-edge device offers unparalleled performance and reliability. Ideal for a wide range of applications, this microcontroller boasts advanced features such as ADC and DMA channels, PWM capability, and a flash ROM programmability. With its compact design and powerful capabilities, the LM3S9B90-IBZ80-C3 is sure to provide exceptional value and benefits to customers seeking top-tier microcontroller solutions. Elevate your projects with Texas Instruments today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is durable and cost-effective, making the product suitable for various applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards.

Maximum Supply Voltage: 1.32 V

The ability to handle a supply voltage of up to 1.32V provides flexibility in power source options.

Package Shape: SQUARE

Square shape package helps in easier arrangement on PCBs and saves space.

Bit Size: 32

32-bit architecture allows for processing and data handling capabilities suitable for a wide range of applications.

Power Supplies (V): 1.2,3.3

Support for multiple power supply voltages enables compatibility with different power sources.

No. of Terminals: 108

108 terminals provide ample connectivity options for interfacing with other components.

Package Style: GRID ARRAY

Grid array package style offers high density and efficient signal routing on the PCB.

Minimum Supply Voltage: 1.08 V

Low minimum supply voltage ensures power efficiency and extends battery life in portable devices.

Maximum Operating Temperature: 85 °C

High maximum operating temperature makes the product suitable for industrial applications in challenging environments.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows the product to function reliably even in cold environments.

ADC Channels: YES

Built-in ADC channels enable analog signal conversion, enhancing the device's versatility in capturing real-world data.

DMA Channels: YES

DMA channels allow for efficient data transfer between peripherals and memory, improving system performance.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and soldering, ensuring proper connection.

ROM Words: 262144

Large ROM capacity of 262144 words allows for storing programs and data, enabling complex functionality.

Maximum Seated Height: 1.5 mm

Low maximum seated height reduces the overall profile of the product, making it suitable for compact designs.

Width: 10 mm

Narrow width of 10mm saves space on the PCB and allows for efficient component layout.

Maximum Clock Frequency: 0.032 MHz

High maximum clock frequency of 0.032MHz enables fast processing and response times in real-time applications.

Length: 10 mm

Compact length of 10mm contributes to the overall small form factor of the product.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures reliable operation in harsh temperature conditions typically found in industrial environments.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC microcontroller architecture offers efficient data processing and control capabilities for a wide range of applications.

RAM Bytes: 98304

Large RAM capacity of 98304 bytes provides ample space for temporary data storage and efficient multitasking.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Terminal Form: BALL

Ball terminal form provides secure and reliable connections on the PCB, minimizing signal loss and ensuring optimal performance.

Nominal Supply Voltage: 1.2 V

Stable nominal supply voltage of 1.2V ensures consistent performance and reliable operation of the product.

PWM Channels: YES

PWM channels enable precise control of analog signals, making the product suitable for applications requiring accurate signal modulation.

ROM Programmability: FLASH

Flash ROM programmability allows for easy and quick updates to the firmware, enhancing flexibility and adaptability.

Terminal Pitch: 0.8 mm

Narrow terminal pitch of 0.8mm enables high-density mounting and efficient signal routing on the PCB.

Speed: 80 rpm

High speed of 80 rpm enables fast data processing and response times, making the product suitable for time-critical applications.

No. of I/O Lines: 60

60 I/O lines provide ample interfacing options for connecting to external devices and peripherals, enhancing the product's versatility.

Technical Specifications

Microcontrollers LM3S9B90-IBZ80-C3 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

JESD-30 Code:

S-PBGA-B108

Length:

10 mm

No. of I/O Lines:

60

No. of Terminals:

108

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA108,12X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

1.2,3.3

Qualification:

Not Qualified

RAM Bytes:

98304

ROM Words:

262144

ROM Programmability:

FLASH

Maximum Seated Height:

1.5 mm

Speed:

80 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

1.32 V

Minimum Supply Voltage:

1.08 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

10 mm

Peripheral IC Type:

Trade Compliance

LM3S9B90-IBZ80-C3 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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