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LM3S8971-EQC50-A2T

Texas Instruments

LM3S8971-EQC50-A2T by Texas Instruments

Texas Instruments LM3S8971-EQC50-A2T microcontroller features 32-bit architecture, 262144 ROM words, and 65536 RAM bytes. Ideal for industrial applications with a temperature range of -40 to 105°C, it offers PWM channels, ADC support, and operates at a max clock frequency of 0.032 MHz.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,913 parts In-Stock

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Digiode

USA . 1,867 parts In-Stock

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One Stop Electronics

USA . 1,273 parts In-Stock

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$13.000

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$13.000

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AZTECH Wire

Italy . 707 parts In-Stock

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$15.708

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707

$15.708

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Parana Technologies

USA . 1,220 parts In-Stock

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$71.172

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ChromeModa Solutions

Germany . 3,115 parts In-Stock

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$79.968

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$65.574

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$79.968

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IDEA Electronic Components Group

UK . 2,024 parts In-Stock

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$79.968

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$75.970

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$71.971

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$71.971

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Corphita

USA . 1,969 parts In-Stock

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DigiPath Technology Company

USA . 1,769 parts In-Stock

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$72.099

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Microchip USA

USA . 462 parts In-Stock

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Overview

Experience the unmatched quality and reliability of Texas Instruments with the LM3S8971-EQC50-A2T microcontroller. This powerful device offers a wide range of applications in various industries, providing customers with exceptional value and benefits. With its advanced technology and innovative design, this microcontroller is sure to exceed your expectations. Trust Texas Instruments to deliver top-notch performance and efficiency for all your project needs. Elevate your designs with the LM3S8971-EQC50-A2T microcontroller today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the microcontroller, making it suitable for various environments.

Surface Mount: YES

Surface mount design allows for easy and convenient installation on PCBs, saving space and reducing assembly time.

Maximum Supply Voltage: 2.75 V

Operating within a low maximum supply voltage range makes this microcontroller energy efficient and safe for sensitive components.

Bit Size: 32

32-bit architecture provides higher processing power and efficiency compared to lower bit microcontrollers.

Power Supplies (V): 2.5,3.3

Supports multiple power supply voltages, offering flexibility in system design and power management.

No. of Terminals: 100

High number of terminals allow for a wide range of connectivity options and I/O capabilities.

Package Style (Meter): FLATPACK

Flatpack package style enables a compact design and easy integration into electronic devices.

ADC Channels: YES

Analog-to-digital converter channels allow for the microcontroller to interface with analog sensors and devices.

ROM Words: 262144

Large ROM capacity allows for storing a significant amount of program data and instructions.

Maximum Operating Temperature: 105 °C

High maximum operating temperature range makes this microcontroller suitable for industrial applications and harsh environments.

Technical Specifications

Microcontrollers LM3S8971-EQC50-A2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G100

Length:

14 mm

No. of I/O Lines:

38

No. of Terminals:

100

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

65536

ROM Words:

262144

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

14 mm

Peripheral IC Type:

Trade Compliance

LM3S8971-EQC50-A2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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