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LM3S8930-IQC50-A2T

Texas Instruments

LM3S8930-IQC50-A2T by Texas Instruments

Texas Instruments' LM3S8930-IQC50-A2T is a 32-bit microcontroller with 262144 ROM words and 65536 RAM bytes. Operating at a max clock frequency of 0.032 MHz, it features 34 I/O lines and PWM channels for industrial applications requiring high-speed processing and precise control.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,582 parts In-Stock

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Digiode

USA . 208 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 328 parts In-Stock

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$16.596

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328

$16.596

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One Stop Electronics

USA . 196 parts In-Stock

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$28.000

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Parana Technologies

USA . 774 parts In-Stock

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$65.449

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DigiPath Technology Company

USA . 1,765 parts In-Stock

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$72.067

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$66.302

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$72.067

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ChromeModa Solutions

Germany . 3,919 parts In-Stock

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$73.538

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$60.301

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3,919

$73.538

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IDEA Electronic Components Group

UK . 1,598 parts In-Stock

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$73.538

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$69.861

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$66.184

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Component Stockers USA

USA . 572 parts In-Stock

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$99.990

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Corphita

USA . 1,090 parts In-Stock

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Microchip USA

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Overview

Experience the cutting-edge technology of Texas Instruments with the LM3S8930-IQC50-A2T microcontroller. Crafted with precision and reliability, this microcontroller offers exceptional performance and versatility for a wide range of applications. Whether you're working on IoT devices, robotics, or automation systems, this product is designed to meet your needs with its advanced features and capabilities. Trust Texas Instruments for quality, innovation, and value that will take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to external factors, ensuring a longer lifespan for the product

Surface Mount: YES

Easily mountable on circuit boards, saving time and effort during assembly

Maximum Supply Voltage: 2.75 V

Optimal voltage range for efficient operation and power consumption

Package Shape: SQUARE

Compact shape that saves space on the board and allows for efficient layout design

Bit Size: 32

High bit size allows for complex operations and calculations

Power Supplies (V): 2.5,3.3

Support for multiple power supply options for flexibility in design and compatibility

No. of Terminals: 100

Sufficient number of terminals for connecting various components and peripherals

Package Style (Meter): FLATPACK

Flatpack style enhances thermal performance and ease of installation

Minimum Supply Voltage: 2.25 V

Low minimum supply voltage allows for operation in low-power scenarios

Maximum Operating Temperature: 85 °C

High operating temperature range suitable for industrial environments

Minimum Operating Temperature: -40 °C

Wide temperature range ensures the product can function in extreme conditions

Terminal Finish: TIN

Tin finish provides good conductivity and solderability for reliable connections

ADC Channels: YES

Built-in Analog-to-Digital Converter allows for interfacing with analog sensors and devices

Terminal Position: QUAD

Quad terminal position facilitates easy placement on the PCB and reduces the risk of short circuits

ROM Words: 262144

Large ROM capacity for storing program data and instructions

Maximum Seated Height: 1.6 mm

Low profile design for compact and space-efficient installations

Width: 14 mm

Standard width size for compatibility with common PCB layouts

Maximum Clock Frequency: 0.032 MHz

High clock frequency for fast data processing and operation speed

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand reflow soldering process for 30 seconds, ensuring proper assembly

Peak Reflow Temperature °C: 260

High peak reflow temperature enables robust soldering connections

Length: 14 mm

Standard length size for compatibility with common PCB layouts

Temperature Grade: INDUSTRIAL

Industrial-grade temperature rating for reliable performance in harsh environments

Peripheral IC Type: MICROCONTROLLER, RISC

Microcontroller with Reduced Instruction Set Computing architecture for efficient operation and control

RAM Bytes: 65536

Large RAM capacity for temporary data storage and processing

Technology: CMOS

CMOS technology provides low power consumption and high integration capability

Terminal Form: GULL WING

Gull wing terminal form for easy soldering and secure mounting on the PCB

Nominal Supply Voltage: 2.5 V

Stable nominal supply voltage for consistent performance and operation

PWM Channels: YES

Pulse Width Modulation channels for precise control of connected devices

ROM Programmability: FLASH

Flash ROM programmability allows for easy updating and reprogramming of firmware

Terminal Pitch: 0.5 mm

Fine terminal pitch for high-density board designs and compact layouts

Moisture Sensitivity Level (MSL): 3

MSL level 3 for moderate exposure control during storage and handling

Speed: 50 rpm

Operational speed of 50 revolutions per minute for efficient data processing

No. of I/O Lines: 34

Adequate number of input/output lines for connecting external devices and peripherals

Technical Specifications

Microcontrollers LM3S8930-IQC50-A2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G100

JESD-609 Code:

e3

Length:

14 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

34

No. of Terminals:

100

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

65536

ROM Words:

262144

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Peripheral IC Type:

Trade Compliance

LM3S8930-IQC50-A2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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