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LM3S828-IGZ50-C2

Texas Instruments

LM3S828-IGZ50-C2 by Texas Instruments

LM3S828-IGZ50-C2 by Texas Instruments is a 32-bit microcontroller with 48 terminals, 8192 bytes of RAM, and 65536 ROM words. It operates at a max clock frequency of 0.032 MHz and has PWM channels for industrial applications requiring high-speed processing and precise control.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 4,982 parts In-Stock

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Digiode

USA . 969 parts In-Stock

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AZTECH Wire

Italy . 530 parts In-Stock

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$4.916

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One Stop Electronics

USA . 756 parts In-Stock

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$32.000

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Parana Technologies

USA . 1,584 parts In-Stock

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$54.094

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ChromeModa Solutions

Germany . 4,560 parts In-Stock

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$60.780

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$49.840

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IDEA Electronic Components Group

UK . 1,212 parts In-Stock

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$60.780

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$57.741

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$54.702

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QUARKTWIN TECHNOLOGY LTD

USA . 25,585 parts In-Stock

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Microchip USA

USA . 11,212 parts In-Stock

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Corphita

USA . 4,731 parts In-Stock

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DigiPath Technology Company

USA . 125 parts In-Stock

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$54.799

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Kepictronics

USA . 72 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the LM3S828-IGZ50-C2 microcontroller by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-tier quality and reliability in all their products. This versatile microcontroller is perfect for a wide range of applications, offering customers unmatched value and performance. From industrial automation to IoT devices, this microcontroller provides seamless integration and advanced functionality. Experience the difference that Texas Instruments brings to the table with the LM3S828-IGZ50-C2.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for compact and efficient PCB design, saving space and making assembly easier.

Maximum Supply Voltage: 3.6 V

Can support a higher voltage input range, providing flexibility in power supply options.

Package Shape: SQUARE

Square package shape simplifies placement on the PCB and ensures uniformity in design layout.

Bit Size: 32

32-bit architecture enables higher processing capabilities and performance.

Power Supplies (V): 3.3

Standard power supply voltage for compatibility with other components and systems.

No. of Terminals: 48

Sufficient number of terminals for interfacing with various external devices and peripherals.

Package Style (Meter): CHIP CARRIER

Chip carrier package style offers good thermal performance and protection for the microcontroller.

Minimum Supply Voltage: 3 V

Supports a low input voltage to accommodate different power sources.

Maximum Operating Temperature: 85 °C

High maximum operating temperature range suitable for industrial applications and harsh environments.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures reliability even in extreme cold conditions.

ADC Channels: YES

Built-in Analog-to-Digital Converter allows for conversion of analog signals to digital data for processing.

Terminal Position: QUAD

Quad terminal position simplifies PCB layout and enhances signal integrity.

ROM Words: 65536

Large ROM capacity for storing program instructions and data.

Maximum Seated Height: 1 mm

Low profile design for space-constrained applications and slim electronic devices.

Width: 6.875 mm

Compact width dimension for fitting into tight spaces and small form factor designs.

Maximum Clock Frequency: 0.032 MHz

High clock frequency for fast data processing and real-time applications.

Length: 6.875 mm

Short length for a compact footprint on the PCB layout.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature range ensures reliable operation in harsh environmental conditions.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture for efficient processing and control of peripheral devices.

RAM Bytes: 8192

Sufficient RAM capacity for data storage and manipulation during program execution.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity for reliable operation.

Terminal Form: NO LEAD

No-lead terminal form simplifies soldering process and improves reliability.

Maximum Supply Current: 110 mA

Moderate supply current requirement for efficient power usage and battery life.

Nominal Supply Voltage: 3.3 V

Stable supply voltage level for consistent performance and signal integrity.

PWM Channels: YES

Pulse Width Modulation channels for precise control of output signals and motor speed.

ROM Programmability: FLASH

Flash ROM programmability allows for easy updates and reprogramming of the microcontroller.

Terminal Pitch: 0.5 mm

Fine terminal pitch for high-density PCB layouts and space-saving designs.

Speed: 50 rpm

Operational speed of 50 revolutions per minute ensures timely response and processing of data.

No. of I/O Lines: 28

Adequate number of I/O lines for connecting to external devices and peripherals for versatile applications.

Technical Specifications

Microcontrollers LM3S828-IGZ50-C2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-XQCC-N48

Length:

6.875 mm

No. of I/O Lines:

28

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

8192

ROM Words:

65536

ROM Programmability:

FLASH

Maximum Seated Height:

1 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

110 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6.875 mm

Peripheral IC Type:

Trade Compliance

LM3S828-IGZ50-C2 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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