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LM3S817-IGZ50-C2

Texas Instruments

LM3S817-IGZ50-C2 by Texas Instruments

LM3S817-IGZ50-C2 by Texas Instruments is a 32-bit microcontroller with 48 terminals, operating at a max frequency of 0.032 MHz. It features 8192 bytes of RAM, 65536 ROM words, and PWM channels for industrial applications requiring high-speed processing and ADC capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,685 parts In-Stock

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Digiode

USA . 1,893 parts In-Stock

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AZTECH Wire

Italy . 787 parts In-Stock

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$13.517

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One Stop Electronics

USA . 1,607 parts In-Stock

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$19.000

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Parana Technologies

USA . 1,634 parts In-Stock

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$34.278

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$146.169

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$34.278

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ChromeModa Solutions

Germany . 4,302 parts In-Stock

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$38.515

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$31.582

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4,302

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IDEA Electronic Components Group

UK . 1,068 parts In-Stock

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$38.515

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$36.589

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$34.664

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$34.664

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Corphita

USA . 1,732 parts In-Stock

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Microchip USA

USA . 1,338 parts In-Stock

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DigiPath Technology Company

USA . 1,121 parts In-Stock

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$34.725

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Kepictronics

USA . 86 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the LM3S817-IGZ50-C2 microcontroller by Texas Instruments. Designed to meet the highest standards of quality, this versatile chip offers seamless integration and unmatched performance for a wide range of applications. Whether you're working on robotics, IoT devices, or industrial automation, this microcontroller delivers reliable operation, efficient power management, and advanced features that give you a competitive edge. Trust Texas Instruments for superior innovation and get ready to take your projects to the next level with the LM3S817-IGZ50-C2.

Feature Benefit Bullets

Surface Mount: YES

Makes it easy to mount the microcontroller on a PCB, saving space and making the assembly process more efficient.

Maximum Supply Voltage: 3.6 V

Can operate with a relatively high supply voltage, making it suitable for a wide range of applications.

Package Shape: SQUARE

The square package shape allows for easy placement on the PCB and efficient use of space.

Bit Size: 32

Having a 32-bit architecture provides the microcontroller with high processing power suitable for complex tasks.

Power Supplies (V): 3.3

Operates efficiently at 3.3V, a common voltage level in many electronic systems.

No. of Terminals: 48

Having 48 terminals allows for a wide range of input/output connections, enabling versatility in connectivity.

Package Style (Meter): CHIP CARRIER

The chip carrier package style offers a compact design and good thermal performance.

Minimum Supply Voltage: 3 V

Can operate at relatively low supply voltage levels, saving power in battery-operated applications.

Maximum Operating Temperature: 85 °C

Can withstand high operating temperatures, making it suitable for industrial applications where heat may be a factor.

Minimum Operating Temperature: -40 °C

Capable of operating in very cold environments, adding to its versatility in various operating conditions.

ADC Channels: YES

Having ADC channels allows for analog-to-digital conversion, essential for interfacing with analog sensors and signals.

Terminal Position: QUAD

Quad terminal position offers good connectivity options and ease of PCB routing.

ROM Words: 65536

Having 65536 ROM words provides ample storage for program code and data, enabling the microcontroller to handle complex tasks.

Maximum Seated Height: 1 mm

With a low seated height of 1mm, this microcontroller can fit into small spaces or slim devices.

Width: 6.875 mm

Compact width size makes it suitable for applications where space is limited.

Maximum Clock Frequency: 0.032 MHz

Operates at a maximum clock frequency of 32 kHz, suitable for applications where high processing speed is not critical.

Length: 6.875 mm

Compact length size makes it suitable for applications where space is limited.

Temperature Grade: INDUSTRIAL

Designed to operate reliably in industrial temperature ranges, ensuring stability in harsh environmental conditions.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture enhances processing efficiency and speed, making it suitable for real-time applications.

RAM Bytes: 8192

Having 8192 bytes of RAM allows for efficient data storage and manipulation, supporting the execution of complex algorithms.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the microcontroller energy-efficient and reliable.

Terminal Form: NO LEAD

No lead terminal form simplifies the soldering process during assembly, reducing production time and cost.

Maximum Supply Current: 110 mA

Operates with a maximum supply current of 110 mA, making it suitable for low-power applications.

Nominal Supply Voltage: 3.3 V

Nominal supply voltage of 3.3V ensures stable operation within the specified range, enhancing reliability.

PWM Channels: YES

Having PWM channels allows for precise control of analog outputs, essential for applications like motor control and LED dimming.

ROM Programmability: FLASH

Flash ROM programmability enables easy and quick updates to the microcontroller firmware without the need for external programming tools.

Terminal Pitch: 0.5 mm

Fine terminal pitch of 0.5mm allows for high-density mounting and compact PCB design.

Speed: 50 rpm

Operating speed of 50 rpm makes it suitable for applications requiring moderate processing speed.

No. of I/O Lines: 30

With 30 I/O lines, the microcontroller offers flexibility in interfacing with external devices, enabling a wide range of functions.

Technical Specifications

Microcontrollers LM3S817-IGZ50-C2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-XQCC-N48

Length:

6.875 mm

No. of I/O Lines:

30

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

8192

ROM Words:

65536

ROM Programmability:

FLASH

Maximum Seated Height:

1 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

110 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6.875 mm

Peripheral IC Type:

Trade Compliance

LM3S817-IGZ50-C2 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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