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LM3S811-EGZ50-C2T

Texas Instruments

LM3S811-EGZ50-C2T by Texas Instruments

LM3S811-EGZ50-C2T by Texas Instruments is a 32-bit microcontroller with 48 terminals, operating at up to 0.032 MHz. It features 8192 bytes of RAM, 65536 ROM words, and PWM channels for industrial applications requiring high-speed processing and precise control.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 4,094 parts In-Stock

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Digiode

USA . 3,572 parts In-Stock

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AZTECH Wire

Italy . 369 parts In-Stock

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$9.026

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369

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One Stop Electronics

USA . 599 parts In-Stock

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$23.000

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Parana Technologies

USA . 1,097 parts In-Stock

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$31.236

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$75.548

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DigiPath Technology Company

USA . 1,103 parts In-Stock

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$34.395

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$31.643

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ChromeModa Solutions

Germany . 5,208 parts In-Stock

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$35.097

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$28.780

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$35.097

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IDEA Electronic Components Group

UK . 618 parts In-Stock

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$35.097

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$33.342

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$31.587

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618

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Corphita

USA . 4,672 parts In-Stock

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Microchip USA

USA . 2,738 parts In-Stock

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Overview

Unlock the potential of your next project with the LM3S811-EGZ50-C2T microcontroller by Texas Instruments. Known for their top-notch quality and reliability, Texas Instruments delivers cutting-edge technology in a compact package. Ideal for a wide range of applications, this microcontroller offers unmatched value and benefits to customers seeking high performance and efficiency. Trust Texas Instruments to provide innovative solutions for all your microcontroller needs.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto circuit boards, making this microcontroller convenient for mass production.

Maximum Supply Voltage: 3.6 V

Can handle a higher supply voltage, providing flexibility in power supply options for different applications.

Package Shape: SQUARE

Square package shape enables efficient use of space on the circuit board, especially in compact designs.

Bit Size: 32

With a 32-bit architecture, this microcontroller can perform complex calculations and process data efficiently.

Power Supplies (V): 3.3

Operates at a commonly used voltage level, ensuring compatibility with various power sources.

No. of Terminals: 48

Having 48 terminals allows for versatile connectivity options and integration with other components.

Package Style (Meter): CHIP CARRIER

Chip carrier package style offers robust protection for the microcontroller and ease of handling during assembly.

Minimum Supply Voltage: 3 V

Can operate at a minimum supply voltage of 3V, suitable for low-power applications.

Maximum Operating Temperature: 105 °C

High maximum operating temperature makes this microcontroller suitable for industrial environments with varying temperature conditions.

Minimum Operating Temperature: -40 °C

Wide temperature range makes this microcontroller suitable for use in extreme cold environments.

ADC Channels: YES

Having ADC channels allows the microcontroller to convert analog signals into digital data, expanding its range of applications.

Terminal Position: QUAD

Quad terminal position enables efficient connectivity and integration within the circuit layout.

ROM Words: 65536

Large ROM capacity of 65536 words allows for storing a significant amount of program data and instructions.

Maximum Seated Height: 1 mm

Low seated height makes this microcontroller suitable for slim and compact designs.

Width: 6.875 mm

Compact width dimensions enable space-saving integration on the circuit board.

Maximum Clock Frequency: 0.032 MHz

High maximum clock frequency of 0.032 MHz indicates fast processing speed and performance.

Length: 6.875 mm

Compact length dimensions make this microcontroller suitable for space-constrained applications.

Temperature Grade: INDUSTRIAL

Designed for industrial grade temperature ranges, ensuring reliable performance in harsh environments.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture in this microcontroller enables efficient processing of instructions, enhancing overall performance.

RAM Bytes: 8192

Ample RAM capacity of 8192 bytes allows for efficient data storage and processing.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity for reliable operation in various environments.

Terminal Form: NO LEAD

No-lead terminal form simplifies the assembly process and ensures secure connections.

Maximum Supply Current: 110 mA

Can handle a maximum supply current of 110 mA, suitable for applications with varying power requirements.

Nominal Supply Voltage: 3.3 V

Stable nominal supply voltage of 3.3V ensures consistent and reliable performance.

PWM Channels: YES

PWM channels enable precise control over analog signals, making this microcontroller suitable for applications requiring modulation techniques.

ROM Programmability: FLASH

Flash ROM programmability allows for easy updating and modification of program code without the need for external programming tools.

Terminal Pitch: 0.5 mm

Fine terminal pitch of 0.5 mm enables high-density integration on the circuit board.

Speed: 50 rpm

With a speed of 50 rpm, this microcontroller can efficiently process instructions and data at a rapid pace.

No. of I/O Lines: 32

Having 32 I/O lines provides flexibility in interfacing with external devices and peripherals, enhancing connectivity options.

Technical Specifications

Microcontrollers LM3S811-EGZ50-C2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-XQCC-N48

Length:

6.875 mm

No. of I/O Lines:

32

No. of Terminals:

48

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

8192

ROM Words:

65536

ROM Programmability:

FLASH

Maximum Seated Height:

1 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

110 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6.875 mm

Peripheral IC Type:

Trade Compliance

LM3S811-EGZ50-C2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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