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LM3S808-EGZ50-C2

Texas Instruments

LM3S808-EGZ50-C2 by Texas Instruments

LM3S808-EGZ50-C2 by Texas Instruments is a 32-bit microcontroller with 48 terminals, 8192 bytes of RAM, and a max clock frequency of 0.032 MHz. It is ideal for industrial applications requiring ADC channels, PWM functionality, and ROM programmability using flash technology.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,253 parts In-Stock

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Digiode

USA . 2,717 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 844 parts In-Stock

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$13.209

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844

$13.209

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Parana Technologies

USA . 2,284 parts In-Stock

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$14.795

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$15.227

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$14.795

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$15.227

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DigiPath Technology Company

USA . 2,227 parts In-Stock

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$16.292

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$14.988

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2,227

$16.292

$14.988

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ChromeModa Solutions

Germany . 3,398 parts In-Stock

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$16.624

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$13.632

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$16.624

$13.632

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IDEA Electronic Components Group

UK . 2,145 parts In-Stock

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$16.624

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$15.793

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$14.962

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2,145

$16.624

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$14.962

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One Stop Electronics

USA . 603 parts In-Stock

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$27.000

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Microchip USA

USA . 2,445 parts In-Stock

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Corphita

USA . 1,164 parts In-Stock

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Overview

Unlock the limitless potential of your projects with the LM3S808-EGZ50-C2 by Texas Instruments. This high-quality microcontroller offers unparalleled performance and reliability, making it ideal for a wide range of applications. From robotics to IoT devices, this versatile chip delivers exceptional value and benefits to customers seeking cutting-edge technology. Trust in Texas Instruments' reputation for excellence and take your designs to the next level with the LM3S808-EGZ50-C2.

Feature Benefit Bullets

Surface Mount: YES

Surface mount design allows for easy and efficient installation onto circuit boards, saving space and simplifying the manufacturing process.

Maximum Supply Voltage: 3.6 V

Higher maximum supply voltage allows for compatibility with a wider range of power sources, increasing flexibility in system design.

Bit Size: 32

A 32-bit architecture provides enhanced performance and capability for computing operations, making this microcontroller suitable for complex applications.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture offers simplified instruction set and streamlined operation, leading to faster execution of tasks and better efficiency.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature range ensures reliable operation in harsh environments, making it suitable for industrial applications where temperature fluctuations are common.

Maximum Clock Frequency: 0.032 MHz

High maximum clock frequency allows for fast processing speeds, making this microcontroller suitable for applications requiring real-time processing or high-speed data transfer.

RAM Bytes: 8192

Ample RAM capacity enables the microcontroller to store and manipulate a large amount of data, facilitating multitasking and complex computation tasks.

Technical Specifications

Microcontrollers LM3S808-EGZ50-C2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-XQCC-N48

Length:

6.875 mm

No. of I/O Lines:

28

No. of Terminals:

48

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

8192

ROM Words:

65536

ROM Programmability:

FLASH

Maximum Seated Height:

1 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

110 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6.875 mm

Peripheral IC Type:

Trade Compliance

LM3S808-EGZ50-C2 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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