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LM3S800-IQN50-C2

Texas Instruments

LM3S800-IQN50-C2 by Texas Instruments

Texas Instruments LM3S800-IQN50-C2 microcontroller features 32-bit CPU, 8KB RAM, and 65536 ROM words. Ideal for industrial applications with peripherals like timers and low power mode. Operates at -40 to 85°C temperature range with a max clock frequency of 0.032 MHz.

Median Price

$8.079

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1,000 parts In-Stock

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$8.079

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$8.079

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Distributors (In-Stock)

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Vyrian

USA . 6,644 parts In-Stock

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Digiode

USA . 4,248 parts In-Stock

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Connector Distribution Corp

USA . 2 parts In-Stock

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Right Parts Inc.

USA . 2 parts In-Stock

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2

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Distributors (Availability)

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AZTECH Wire

Italy . 214 parts In-Stock

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$8.790

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214

$8.790

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Microchip USA

USA . 360 parts In-Stock

1+ parts

$26.990

100+ parts

$26.600

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$26.410

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$26.220

360

$26.990

$26.600

$26.410

$26.220

Parana Technologies

USA . 363 parts In-Stock

1+ parts

$48.185

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363

$48.185

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ChromeModa Solutions

Germany . 6,912 parts In-Stock

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$54.141

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$44.396

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6,912

$54.141

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IDEA Electronic Components Group

UK . 2,137 parts In-Stock

1+ parts

$54.141

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$51.434

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$48.727

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$48.727

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Lixinc

USA . 9,281 parts In-Stock

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Corphita

USA . 1,548 parts In-Stock

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Authorized Procurement Solutions

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DigiPath Technology Company

USA . 259 parts In-Stock

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$48.814

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Kepictronics

USA . 94 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the LM3S800-IQN50-C2 microcontroller from Texas Instruments. This top-of-the-line product offers unparalleled quality and reliability, showcasing the expertise of its renowned manufacturer. Ideal for a wide range of applications, this microcontroller provides customers with unmatched value, benefits, and advantages. From its advanced features to its superior performance, the LM3S800-IQN50-C2 is the perfect choice for anyone looking to take their projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the product lightweight and durable, ideal for portable and industrial applications.

Integrated Cache: YES

Having an integrated cache helps improve the overall performance of the microcontroller by providing fast access to frequently used data and instructions.

Maximum Supply Voltage: 3.6 V

The high maximum supply voltage allows for flexibility in power supply options and compatibility with various systems and components.

On Chip Data RAM Width: 8

Having a wide on-chip data RAM width of 8 increases the data processing capabilities of the microcontroller, enabling efficient execution of tasks.

Package Shape: SQUARE

The square package shape helps in easy integration and layout of the microcontroller on a PCB, optimizing space utilization in designs.

Bit Size: 32

A 32-bit architecture allows for handling larger data sets and performing complex calculations with precision, making it suitable for demanding applications.

Power Supplies (V): 3.3

The 3.3V power supply ensures compatibility with standard voltage levels and offers energy efficiency, reducing power consumption.

No. of Terminals: 48

Having 48 terminals provides ample connectivity options for interfacing with external devices and peripherals, expanding the functionality of the microcontroller.

Minimum Supply Voltage: 3 V

The low minimum supply voltage of 3V allows for operation in power-constrained environments and extends the range of compatible power sources.

Maximum Operating Temperature: 85°C

With a high maximum operating temperature, the microcontroller can withstand challenging environmental conditions and perform reliably in industrial settings.

CPU Family: CORTEX-M3

The Cortex-M3 CPU family offers high performance, low power consumption, and a rich set of features, making it suitable for a wide range of embedded applications.

Minimum Operating Temperature: -40°C

The ability to operate at -40°C ensures reliable performance in cold environments and enhances the microcontroller's suitability for outdoor and rugged applications.

ROM Words: 65536

With a large ROM capacity of 65536 words, the microcontroller can store a significant amount of program code and data, enabling the implementation of complex algorithms.

Technical Specifications

Microcontrollers LM3S800-IQN50-C2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

NO

Address Bus Width:

0

Bit Size:

32

Boundary Scan:

YES

CPU Family:

CORTEX-M3

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

Format:

FIXED POINT

Integrated Cache:

YES

JESD-30 Code:

S-PQFP-G48

JESD-609 Code:

e4

Length:

7 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

0

No. of External Interrupts:

0

No. of I/O Lines:

36

No. of Serial I/Os:

4

No. of Terminals:

48

No. of Timers:

3

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP48,.35SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

8192

ROM Words:

65536

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

110 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7 mm

Peripheral IC Type:

Data EEPROM Size:

0

Connectivity:

I2C, SSI, UART(2)

Peripherals:

TIMER(3), WDT

Trade Compliance

LM3S800-IQN50-C2 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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