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LM3S800-EQN50-C2T

Texas Instruments

LM3S800-EQN50-C2T by Texas Instruments

Texas Instruments LM3S800-EQN50-C2T is a 32-bit microcontroller with 48 terminals, operating at -40 to 105°C. It features 8192 bytes of RAM, 65536 ROM words, and supports PWM channels. Ideal for industrial applications requiring a max clock frequency of 0.032 MHz.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,645 parts In-Stock

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Digiode

USA . 2,402 parts In-Stock

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2,402

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Distributors (Availability)

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AZTECH Wire

Italy . 866 parts In-Stock

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$12.593

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One Stop Electronics

USA . 959 parts In-Stock

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$13.000

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$13.000

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Parana Technologies

USA . 652 parts In-Stock

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$47.526

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DigiPath Technology Company

USA . 1,708 parts In-Stock

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$52.332

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IDEA Electronic Components Group

UK . 2,358 parts In-Stock

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$53.400

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$50.730

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$48.060

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2,358

$53.400

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ChromeModa Solutions

Germany . 2,246 parts In-Stock

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$53.400

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$43.788

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Microchip USA

USA . 1,988 parts In-Stock

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Corphita

USA . 788 parts In-Stock

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Overview

Unlock the power of innovation with the LM3S800-EQN50-C2T microcontroller by Texas Instruments. Built using high-quality materials and cutting-edge technology, this device offers unmatched performance and reliability. Ideal for a wide range of applications, from industrial automation to consumer electronics, this microcontroller provides customers with value, efficiency, and flexibility. Trust Texas Instruments to deliver products that exceed expectations and drive success in your projects. Elevate your designs with the LM3S800-EQN50-C2T today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the microcontroller, making it durable and resistant to damage.

Surface Mount: YES

Surface mount technology allows for easy assembly onto printed circuit boards, saving space and making the product suitable for compact designs.

Maximum Supply Voltage: 3.6 V

This high maximum supply voltage ensures compatibility with a wide range of power sources, making the product versatile.

Bit Size: 32

A 32-bit architecture allows for faster processing speeds and higher performance capabilities, making this microcontroller suitable for demanding applications.

Power Supplies (V): 3.3

The nominal supply voltage of 3.3V provides stable and reliable power to the microcontroller, ensuring consistent operation.

No. of Terminals: 48

Having a high number of terminals allows for a greater number of connections and peripherals to be supported, making the microcontroller more versatile.

ADC Channels: YES

Analog-to-digital converter (ADC) channels allow the microcontroller to interface with analog sensors and signals, expanding its range of applications.

ROM Words: 65536

With a large ROM capacity, the microcontroller can store a significant amount of program code, enabling complex functions and algorithms to be implemented.

RAM Bytes: 8192

A generous amount of RAM allows for efficient data processing and storage, enhancing the performance of the microcontroller.

PWM Channels: YES

Pulse-width modulation (PWM) channels enable precise control of output signals, making the microcontroller suitable for applications such as motor control and LED brightness adjustment.

Technical Specifications

Microcontrollers LM3S800-EQN50-C2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G48

JESD-609 Code:

e3

Length:

7 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

36

No. of Terminals:

48

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP48,.35SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

8192

ROM Words:

65536

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

110 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7 mm

Peripheral IC Type:

Trade Compliance

LM3S800-EQN50-C2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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