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LM3S6C65-IQC80-A2T

Texas Instruments

LM3S6C65-IQC80-A2T by Texas Instruments

LM3S6C65-IQC80-A2T by Texas Instruments is a 32-bit microcontroller with 524288 ROM words and 65536 RAM bytes. It operates at a max clock frequency of 16.384 MHz, making it suitable for industrial applications requiring high-speed processing and control capabilities. With features like ADC channels, DMA channels, and PWM channels, this microcontroller offers versatile functionality for various embedded systems projects.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,527 parts In-Stock

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Digiode

USA . 263 parts In-Stock

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263

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One Stop Electronics

USA . 1,104 parts In-Stock

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$3.000

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$3.000

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AZTECH Wire

Italy . 341 parts In-Stock

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$7.329

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341

$7.329

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Parana Technologies

USA . 1,781 parts In-Stock

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$18.741

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$1,740.361

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$16.867

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1,781

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$1,740.361

$16.867

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DigiPath Technology Company

USA . 1,196 parts In-Stock

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$20.636

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ChromeModa Solutions

Germany . 6,990 parts In-Stock

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$21.057

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$17.267

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6,990

$21.057

$17.267

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IDEA Electronic Components Group

UK . 1,977 parts In-Stock

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$21.057

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$20.004

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$18.951

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1,977

$21.057

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$18.951

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Microchip USA

USA . 2,325 parts In-Stock

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Corphita

USA . 636 parts In-Stock

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Overview

Unlock the potential of your next project with the LM3S6C65-IQC80-A2T microcontroller by Texas Instruments. Designed with high-quality materials, this cutting-edge device offers unparalleled performance and reliability. Ideal for a wide range of applications, from industrial automation to consumer electronics, the LM3S6C65-IQC80-A2T provides unmatched value with its advanced features and innovative design. Experience the benefits of top-tier technology and elevate your creations with Texas Instruments' state-of-the-art microcontroller.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the microcontroller, making it suitable for various applications.

Surface Mount: YES

Surface mount capability allows for easy and secure installation on circuit boards, saving space and reducing assembly time.

Maximum Supply Voltage: 1.365 V

The low maximum supply voltage helps in reducing power consumption and extending battery life in portable devices.

Package Shape: SQUARE

The square shape of the package offers equal length sides for easy mounting and a compact footprint.

Bit Size: 32

A 32-bit architecture enables the microcontroller to handle complex calculations and processes efficiently.

Power Supplies (V): 1.3,3.3

Support for multiple power supply voltages offers flexibility for different voltage requirements in diverse applications.

No. of Terminals: 100

With a high number of terminals, this microcontroller can interface with numerous external devices for extended functionality.

Minimum Supply Voltage: 1.235 V

The low minimum supply voltage ensures stable operation even under varying voltage conditions, increasing reliability.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature allows for use in industrial settings where elevated temperatures are common.

CPU Family: CORTEX-M3

Based on the Cortex-M3 architecture, this microcontroller offers high performance and energy efficiency for demanding applications.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature, this microcontroller can be used in extreme cold environments without performance degradation.

ADC Channels: YES

Integrated ADC channels enable the microcontroller to convert analog signals to digital data, enhancing its sensor interface capabilities.

DMA Channels: YES

DMA channels allow for efficient data transfers between peripherals and memory without CPU intervention, improving overall system performance.

ROM Words: 524288

The large ROM capacity allows for storing extensive program code and data, accommodating complex applications.

Peripheral IC Type: MICROCONTROLLER, RISC

Being a RISC-based microcontroller, it offers high performance, reduced power consumption, and faster execution of instructions.

RAM Bytes: 65536

Generous RAM capacity enables the microcontroller to efficiently store and process data during program execution.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high noise immunity, making the microcontroller suitable for battery-operated devices.

Maximum Supply Current: 210 mA

The moderate supply current requirement allows for efficient power usage and extends battery life in portable applications.

PWM Channels: YES

PWM channels enable precise control of analog signals, making the microcontroller ideal for motor control, lighting, and other applications.

ROM Programmability: FLASH

The use of flash memory for ROM allows for easy reprogramming of code, facilitating firmware updates and customization.

No. of I/O Lines: 46

With a high number of I/O lines, this microcontroller offers extensive connectivity options for interfacing with external devices and peripherals.

Technical Specifications

Microcontrollers LM3S6C65-IQC80-A2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

CPU Family:

CORTEX-M3

Maximum Clock Frequency:

16.384 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G100

Length:

14 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

46

No. of Terminals:

100

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.3,3.3

Qualification:

Not Qualified

RAM Bytes:

65536

ROM Words:

524288

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

80 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

210 mA

Maximum Supply Voltage:

1.365 V

Minimum Supply Voltage:

1.235 V

Nominal Supply Voltage:

1.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Peripheral IC Type:

Trade Compliance

LM3S6C65-IQC80-A2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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