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LM3S6637-IQC50-A2T

Texas Instruments

LM3S6637-IQC50-A2T by Texas Instruments

Texas Instruments' LM3S6637-IQC50-A2T is a 32-bit microcontroller with 131072 ROM words and 32768 RAM bytes. Operating at up to 0.032 MHz, it features 41 I/O lines and PWM channels for industrial applications requiring high-speed processing and precise control.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,877 parts In-Stock

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Digiode

USA . 2,299 parts In-Stock

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2,299

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Distributors (Availability)

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AZTECH Wire

Italy . 736 parts In-Stock

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$5.226

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736

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One Stop Electronics

USA . 408 parts In-Stock

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$32.000

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408

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Parana Technologies

USA . 484 parts In-Stock

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$62.772

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DigiPath Technology Company

USA . 1,267 parts In-Stock

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$69.119

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$63.590

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1,267

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$63.590

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ChromeModa Solutions

Germany . 4,509 parts In-Stock

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$70.530

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$57.835

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4,509

$70.530

$57.835

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IDEA Electronic Components Group

UK . 1,370 parts In-Stock

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$70.530

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$67.004

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$63.477

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1,370

$70.530

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$63.477

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QUARKTWIN TECHNOLOGY LTD

USA . 17,540 parts In-Stock

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Corphita

USA . 4,679 parts In-Stock

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Microchip USA

USA . 4,317 parts In-Stock

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Overview

Unlock the endless possibilities of technology with the LM3S6637-IQC50-A2T microcontroller by Texas Instruments. Crafted with precision and expertise, this high-quality product is designed to revolutionize various applications in the digital world. From industrial automation to consumer electronics, this microcontroller offers unmatched performance, reliability, and efficiency. Experience seamless integration, advanced features, and unparalleled value with the LM3S6637-IQC50-A2T. Choose innovation, choose Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package ensures durability and protection for the microcontroller, making it suitable for a wide range of environmental conditions.

Maximum Supply Voltage: 2.75 V

With a maximum supply voltage of 2.75 V, this microcontroller is energy-efficient and can operate effectively within a low voltage range.

Bit Size: 32

32-bit architecture allows for high-performance computing and processing capabilities, making this microcontroller suitable for complex applications.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature range of -40 to 85°C ensures reliable operation in harsh environments, making it ideal for industrial applications.

ROM Programmability: FLASH

Flash ROM allows for easy reprogramming of the microcontroller, enabling flexibility and adaptability for various applications.

RAM Bytes: 32768

With a large RAM capacity of 32768 bytes, this microcontroller can handle data-intensive tasks efficiently and effectively.

ADC Channels: YES

The presence of ADC channels enables analog-to-digital conversion, making the microcontroller suitable for interfacing with a wide range of sensors and devices.

Technical Specifications

Microcontrollers LM3S6637-IQC50-A2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G100

JESD-609 Code:

e3

Length:

14 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

41

No. of Terminals:

100

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

32768

ROM Words:

131072

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Peripheral IC Type:

Trade Compliance

LM3S6637-IQC50-A2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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