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LM3S612-IGZ50-C2

Texas Instruments

LM3S612-IGZ50-C2 by Texas Instruments

LM3S612-IGZ50-C2 by Texas Instruments is a 32-bit microcontroller with 3.3V power supply, 32768 ROM words, and 8192 RAM bytes. It operates in industrial temperatures from -40 to 85°C and features a Cortex-M3 CPU family for various applications like PWM control, ADC readings, and RISC peripheral IC interfacing.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,284 parts In-Stock

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Digiode

USA . 3,424 parts In-Stock

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AZTECH Wire

Italy . 222 parts In-Stock

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$13.891

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$13.891

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Parana Technologies

USA . 1,136 parts In-Stock

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$22.735

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$23.400

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One Stop Electronics

USA . 1,248 parts In-Stock

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$25.000

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DigiPath Technology Company

USA . 1,004 parts In-Stock

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$25.034

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$23.031

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ChromeModa Solutions

Germany . 5,816 parts In-Stock

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$25.545

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$20.947

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IDEA Electronic Components Group

UK . 1,571 parts In-Stock

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$25.545

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$24.268

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$22.990

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QUARKTWIN TECHNOLOGY LTD

USA . 16,629 parts In-Stock

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Microchip USA

USA . 4,013 parts In-Stock

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Corphita

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Kepictronics

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Overview

Unlock endless possibilities with the LM3S612-IGZ50-C2 by Texas Instruments, a top-tier microcontroller that guarantees superior quality and performance. Built by a trusted manufacturer in the industry, this device offers unparalleled reliability and efficiency for a wide range of applications. From industrial automation to consumer electronics, this microcontroller provides exceptional value, benefits, and advantages to customers seeking cutting-edge technology. Experience seamless operation and unmatched functionality with the LM3S612-IGZ50-C2, your ultimate solution for all your microcontroller needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the microcontroller, making it suitable for various applications.

Surface Mount: YES

Allows for easy installation on a circuit board, saving space and facilitating mass production.

Maximum Supply Voltage: 3.6 V

Supports a higher voltage input, providing flexibility in power supply requirements.

Package Shape: SQUARE

The square shape makes it easy to handle and mount on a PCB, ensuring efficient use of space.

Bit Size: 32

Offers high computational capabilities, suitable for handling complex tasks and calculations.

Power Supplies (V): 3.3

Operates at a common voltage level, compatible with a wide range of power sources.

No. of Terminals: 48

Provides ample I/O options for connecting external devices and sensors.

Package Style (Meter): CHIP CARRIER

The chip carrier package style offers good thermal performance and easy PCB assembly.

Minimum Supply Voltage: 3 V

Can operate at low voltages, saving power and extending battery life in portable applications.

Maximum Operating Temperature: 85 °C

Suitable for industrial environments where high temperatures may be encountered.

CPU Family: CORTEX-M3

Part of the popular Cortex-M3 family known for its energy efficiency and processing power.

Minimum Operating Temperature: -40 °C

Capable of operating in extreme cold conditions, making it suitable for a variety of environments.

ADC Channels: YES

Includes analog-to-digital converter channels, enabling the microcontroller to interface with analog sensors.

Terminal Position: QUAD

Quad terminal positioning allows for easy soldering and connection to the circuit board.

ROM Words: 32768

Offers a generous amount of program memory space for storing code and data.

Maximum Seated Height: 1 mm

Low profile design for space-constrained applications.

Width: 6.875 mm

Compact size fits well on a PCB, saving valuable board space.

Maximum Clock Frequency: 0.032 MHz

High clock frequency for fast processing and response times.

Length: 6.875 mm

Compact form factor for easy integration into tight spaces.

Temperature Grade: INDUSTRIAL

Designed to withstand harsh industrial environments with high and low temperature ranges.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture for efficient and fast processing of instructions.

RAM Bytes: 8192

Sufficient random access memory for data storage and manipulation during operation.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Terminal Form: NO LEAD

No-lead terminal form for easy surface mounting and reliable connections.

Maximum Supply Current: 110 mA

Capable of delivering higher current for driving external components and peripherals.

Nominal Supply Voltage: 3.3 V

Stable supply voltage for consistent performance and reliable operation.

PWM Channels: YES

Pulse-width modulation channels for precise control of output signals and devices.

ROM Programmability: FLASH

Flash ROM programmability allows for easy updates and modifications to the firmware.

Terminal Pitch: 0.5 mm

Fine terminal pitch for high-density PCB designs and miniaturized applications.

Speed: 50 rpm

Capable of processing instructions at a speed of 50 revolutions per minute.

No. of I/O Lines: 34

Sufficient I/O lines for connecting to various external devices and peripherals.

Technical Specifications

Microcontrollers LM3S612-IGZ50-C2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

CPU Family:

CORTEX-M3

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PQCC-N48

Length:

6.875 mm

No. of I/O Lines:

34

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

8192

ROM Words:

32768

ROM Programmability:

FLASH

Maximum Seated Height:

1 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

110 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6.875 mm

Peripheral IC Type:

Trade Compliance

LM3S612-IGZ50-C2 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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