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LM3S610-EQN50-C2T

Texas Instruments

LM3S610-EQN50-C2T by Texas Instruments

LM3S610-EQN50-C2T by Texas Instruments is a 32-bit microcontroller with 3.3V power supply, 32768 ROM words, and 8192 RAM bytes. Ideal for industrial applications, it operates b/w -40 to 105°C and features PWM channels, ADC support, and Cortex-M3 CPU family for efficient processing.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,331 parts In-Stock

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Digiode

USA . 1,622 parts In-Stock

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1,622

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Distributors (Availability)

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AZTECH Wire

Italy . 393 parts In-Stock

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$4.988

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393

$4.988

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One Stop Electronics

USA . 1,345 parts In-Stock

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$9.000

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Parana Technologies

USA . 1,605 parts In-Stock

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$58.121

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$58.121

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DigiPath Technology Company

USA . 655 parts In-Stock

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$63.998

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$58.878

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655

$63.998

$58.878

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ChromeModa Solutions

Germany . 6,312 parts In-Stock

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$65.304

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$53.549

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6,312

$65.304

$53.549

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IDEA Electronic Components Group

UK . 734 parts In-Stock

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$65.304

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$62.039

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$58.774

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734

$65.304

$62.039

$58.774

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QUARKTWIN TECHNOLOGY LTD

USA . 11,552 parts In-Stock

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Corphita

USA . 2,988 parts In-Stock

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Microchip USA

USA . 165 parts In-Stock

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Overview

Unleash the power of innovation with the LM3S610-EQN50-C2T by Texas Instruments, a cutting-edge microcontroller that sets the standard for quality and performance. Designed with precision and expertise, this device offers endless possibilities in a wide range of applications. From industrial automation to consumer electronics, this product delivers unmatched value, efficiency, and reliability. Elevate your projects to new heights with the LM3S610-EQN50-C2T and experience the advantages of world-class technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is durable and provides good protection for the microcontroller, ensuring a longer lifespan.

Maximum Supply Voltage: 3.6 V

Higher maximum supply voltage allows for more flexibility in powering the microcontroller without risking damage.

Bit Size: 32

32-bit architecture allows for more complex computations and better performance compared to lower bit sizes.

ADC Channels: YES

Analog-to-digital converter channels enable the microcontroller to interface with analog sensors or signals, increasing its versatility.

ROM Words: 32768

Large ROM capacity allows for storing a significant amount of program data, making the microcontroller suitable for various applications.

RAM Bytes: 8192

Adequate RAM capacity enables efficient data processing and multitasking capabilities in the microcontroller.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture enhances the microcontroller's performance by simplifying instruction execution and improving speed.

Maximum Clock Frequency: 0.032 MHz

High maximum clock frequency ensures fast execution of instructions, enhancing the overall performance of the microcontroller.

Technical Specifications

Microcontrollers LM3S610-EQN50-C2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

CPU Family:

CORTEX-M3

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G48

Length:

7 mm

No. of I/O Lines:

34

No. of Terminals:

48

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP48,.35SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

8192

ROM Words:

32768

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

110 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7 mm

Peripheral IC Type:

Trade Compliance

LM3S610-EQN50-C2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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