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LM3S5R31-IBZ80-C1

Texas Instruments

LM3S5R31-IBZ80-C1 by Texas Instruments

LM3S5R31-IBZ80-C1 by Texas Instruments is a 32-bit microcontroller with 108 terminals, operating at a max frequency of 0.032 MHz. It features ADC and DMA channels, suitable for industrial applications requiring a CMOS technology-based RISC microcontroller with FLASH ROM programmability.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,440 parts In-Stock

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Digiode

USA . 2,832 parts In-Stock

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AZTECH Wire

Italy . 231 parts In-Stock

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$6.423

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One Stop Electronics

USA . 1,132 parts In-Stock

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$19.000

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Parana Technologies

USA . 1,141 parts In-Stock

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$58.050

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IDEA Electronic Components Group

UK . 1,807 parts In-Stock

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$65.225

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$61.964

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$58.702

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1,807

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ChromeModa Solutions

Germany . 1,277 parts In-Stock

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$65.225

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$53.484

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DigiPath Technology Company

USA . 2,101 parts In-Stock

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$58.807

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Microchip USA

USA . 378 parts In-Stock

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Corphita

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Overview

Unlock the power of innovation with the LM3S5R31-IBZ80-C1 microcontroller by Texas Instruments. This cutting-edge device offers unparalleled quality and reliability, backed by a renowned manufacturer in the industry. Ideal for a wide range of applications, this microcontroller provides efficient performance and flexibility to bring your ideas to life. With advanced features like ADC channels, DMA channels, and PWM channels, this product delivers exceptional value and benefits to customers seeking top-notch technology solutions. Experience the advantages of Texas Instruments' expertise and elevate your projects with the LM3S5R31-IBZ80-C1 microcontroller.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the microcontroller, ensuring reliability in various environments.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, making installation and assembly more efficient.

Maximum Supply Voltage: 1.32 V

The high maximum supply voltage allows for flexibility in power requirements and compatibility with different systems.

Package Shape: SQUARE

The square package shape enables compact design and efficient use of space on circuit boards.

Bit Size: 32

A 32-bit architecture provides high processing power and allows for complex calculations and operations.

No. of Terminals: 108

Having a high number of terminals allows for versatile connectivity options and integration with various components.

Package Style (Meter): GRID ARRAY

The grid array package style offers high density and efficient routing of connections, optimizing the layout of the microcontroller.

Minimum Supply Voltage: 1.08 V

The low minimum supply voltage helps in reducing power consumption and extends the battery life of portable devices.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures stable performance even in harsh operating conditions.

ADC Channels: YES

Having ADC channels allows for analog signal processing, enabling the microcontroller to interface with sensors and other analog devices.

DMA Channels: YES

DMA channels enhance data transfer efficiency and offload the CPU from handling data, improving overall system performance.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy soldering and connection to circuit boards, simplifying the manufacturing process.

Maximum Seated Height: 1.5 mm

The low maximum seated height contributes to a slim form factor and enables compact device designs.

Width: 10 mm

The compact width allows for space-saving integration onto circuit boards and in small electronic devices.

Maximum Clock Frequency: 0.032 MHz

The high maximum clock frequency supports fast processing speeds, making the microcontroller suitable for high-performance applications.

Length: 10 mm

The short length helps in achieving a compact footprint and allows for flexible placement within electronic devices.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliable operation in industrial environments with varying temperature conditions.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture in the microcontroller provides efficient processing and low power consumption, ideal for embedded applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the energy efficiency and reliability of the microcontroller.

Terminal Form: BALL

The ball terminal form facilitates secure connections and reliable soldering, ensuring robust electrical connections.

Nominal Supply Voltage: 1.2 V

The nominal supply voltage provides a stable operating voltage for the microcontroller, ensuring consistent performance.

PWM Channels: YES

Having PWM channels enables precise control of output signals and modulation of power, making the microcontroller suitable for motor control and other applications.

ROM Programmability: FLASH

Flash ROM programmability allows for easy firmware updates and customization, enhancing the flexibility and versatility of the microcontroller.

Terminal Pitch: 0.8 mm

The small terminal pitch offers high density integration and efficient use of PCB space, enabling compact and space-saving designs.

Speed: 80 rpm

The high speed capability enables fast data processing and response times, making the microcontroller suitable for real-time applications.

No. of I/O Lines: 67

Having a high number of I/O lines allows for versatile input and output configurations, enabling the microcontroller to interface with various external devices and peripherals.

Technical Specifications

Microcontrollers LM3S5R31-IBZ80-C1 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

JESD-30 Code:

S-PBGA-B108

Length:

10 mm

No. of I/O Lines:

67

No. of Terminals:

108

Maximum Operating Temperature:

85 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY

Qualification:

Not Qualified

ROM Programmability:

FLASH

Maximum Seated Height:

1.5 mm

Speed:

80 rpm

Maximum Supply Voltage:

1.32 V

Minimum Supply Voltage:

1.08 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

10 mm

Peripheral IC Type:

Trade Compliance

LM3S5R31-IBZ80-C1 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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