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LM3S5791-IQC80-C5

Texas Instruments

LM3S5791-IQC80-C5 by Texas Instruments

Texas Instruments LM3S5791-IQC80-C5 is a 32-bit microcontroller with Cortex-M3 CPU, 131072 ROM words, and 65536 RAM bytes. It operates at a max clock frequency of 80 MHz and has 72 I/O lines for industrial applications requiring high-speed processing and efficient data handling.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,579 parts In-Stock

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Digiode

USA . 1,702 parts In-Stock

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AZTECH Wire

Italy . 268 parts In-Stock

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$15.805

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268

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One Stop Electronics

USA . 1,316 parts In-Stock

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$28.000

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Parana Technologies

USA . 938 parts In-Stock

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$76.350

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DigiPath Technology Company

USA . 1,770 parts In-Stock

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$84.071

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IDEA Electronic Components Group

UK . 1,999 parts In-Stock

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$85.787

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$81.498

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$77.208

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1,999

$85.787

$81.498

$77.208

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ChromeModa Solutions

Germany . 1,337 parts In-Stock

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$85.787

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$70.345

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Lixinc

USA . 10,760 parts In-Stock

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Kepictronics

USA . 5,811 parts In-Stock

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Corphita

USA . 1,183 parts In-Stock

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Perfect Parts

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Microchip USA

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Overview

Discover the LM3S5791-IQC80-C5 by Texas Instruments, a cutting-edge microcontroller that delivers exceptional performance and reliability. With a 32-bit CPU family and a maximum clock frequency of 80 MHz, this device is perfect for a wide range of applications. Featuring advanced technology and high-quality components, it offers customers unmatched value and benefits. Whether you're working on industrial automation, consumer electronics, or other innovative projects, this microcontroller will exceed your expectations. Trust Texas Instruments to provide you with top-notch products that push the boundaries of what's possible.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The PLASTIC/EPOXY material ensures durability and reliability of the microcontroller.

Surface Mount: YES

Ease of installation and space-saving design for compact electronic devices.

Maximum Supply Voltage: 1.32 V

Efficient power consumption and protection against over-voltage situations.

Package Shape: SQUARE

Simplified integration into circuit boards and efficient use of space.

Bit Size: 32

High processing power and capability for handling complex tasks.

Power Supplies (V): 1.3,3.3

Compatibility with standard power sources and flexibility in voltage requirements.

No. of Terminals: 100

Sufficient number of terminals for connecting to external components and peripherals.

Package Style (Meter): FLATPACK, LOW PROFILE, FINE PITCH

Versatile package style options for different assembly and design requirements.

Minimum Supply Voltage: 1.08 V

Reliable operation even with low supply voltage scenarios.

Maximum Operating Temperature: 85 °C

Suitable for industrial applications and environments with high operating temperatures.

CPU Family: CORTEX-M3

Advanced processor architecture for efficient and optimized performance.

Minimum Operating Temperature: -40 °C

Wide temperature range tolerance for operation in extreme conditions.

ADC Channels: YES

Analog-to-digital conversion capabilities for sensor interfacing and data acquisition.

DMA Channels: YES

Direct memory access channels for efficient data transfer and processing.

Terminal Position: QUAD

Quad terminal positioning for easy and organized connectivity.

ROM Words: 131072

Large ROM capacity for storing program instructions and data.

Maximum Seated Height: 1.6 mm

Low profile design for compact and thin electronic devices.

Width: 14 mm

Compact size for space-constrained applications.

Maximum Clock Frequency: 80 MHz

High clock frequency for rapid processing and response times.

Maximum Time At Peak Reflow Temperature (s): 30

Optimized reflow process with specified time duration for reliability.

Peak Reflow Temperature °C: 260

High peak reflow temperature for effective soldering and bonding.

Length: 14 mm

Compact size for space-efficient circuit board layout.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature range for robust performance in harsh conditions.

Peripheral IC Type: MICROCONTROLLER, RISC

Microcontroller with Reduced Instruction Set Computing (RISC) architecture for efficient processing.

RAM Bytes: 65536

Ample RAM storage for temporary data processing and storage.

Technology: CMOS

CMOS technology for low power consumption and reliable operation.

Terminal Form: GULL WING

Gull wing terminal form for secure and reliable solder connections.

Maximum Supply Current: 129 mA

Efficient power usage with limited supply current requirements.

Nominal Supply Voltage: 1.2 V

Stable and standard supply voltage for consistent operation.

PWM Channels: YES

Pulse Width Modulation (PWM) channels for precise control and modulation.

ROM Programmability: FLASH

Flash ROM programmability for easy firmware updates and code changes.

Terminal Pitch: 0.5 mm

Fine terminal pitch for compact and high-density PCB designs.

Moisture Sensitivity Level (MSL): 3

Moderate moisture sensitivity level for handling and storage precautions.

Speed: 80 rpm

Optimal speed performance for various applications and tasks.

No. of I/O Lines: 72

Abundant input/output lines for versatile interfacing and connectivity options.

Technical Specifications

Microcontrollers LM3S5791-IQC80-C5 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

CPU Family:

CORTEX-M3

Maximum Clock Frequency:

80 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G100

Length:

14 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

72

No. of Terminals:

100

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.3,3.3

Qualification:

Not Qualified

RAM Bytes:

65536

ROM Words:

131072

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

80 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

129 mA

Maximum Supply Voltage:

1.32 V

Minimum Supply Voltage:

1.08 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Peripheral IC Type:

Trade Compliance

LM3S5791-IQC80-C5 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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