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LM3S3739-IQC50-A0T

Texas Instruments

LM3S3739-IQC50-A0T by Texas Instruments

Texas Instruments LM3S3739-IQC50-A0T microcontroller features 32-bit CPU, 131072 ROM words, and 65536 RAM bytes. Ideal for industrial applications with -40 to 85°C operating temperature range. Offers connectivity via I2C, SSI, UART, and USB interfaces for versatile usage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,836 parts In-Stock

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Vyrian

USA . 2,064 parts In-Stock

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2,064

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Distributors (Availability)

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AZTECH Wire

Italy . 688 parts In-Stock

1+ parts

$5.684

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688

$5.684

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One Stop Electronics

USA . 1,331 parts In-Stock

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$28.000

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$28.000

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Parana Technologies

USA . 935 parts In-Stock

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$62.870

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935

$62.870

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DigiPath Technology Company

USA . 1,612 parts In-Stock

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$69.227

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1,612

$69.227

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ChromeModa Solutions

Germany . 2,873 parts In-Stock

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$70.640

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$57.925

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2,873

$70.640

$57.925

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IDEA Electronic Components Group

UK . 506 parts In-Stock

1+ parts

$70.640

100+ parts

$67.108

1k+ parts

$63.576

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506

$70.640

$67.108

$63.576

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Corphita

USA . 2,539 parts In-Stock

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Microchip USA

USA . 449 parts In-Stock

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449

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Overview

Unlock the power of innovation with the LM3S3739-IQC50-A0T by Texas Instruments. As a leader in microcontroller technology, Texas Instruments offers top-quality products that are perfect for a wide range of applications. From industrial automation to consumer electronics, this microcontroller provides unmatched performance and reliability. With integrated cache, multiple connectivity options, and low power mode, this product delivers exceptional value and versatility. Stay ahead of the curve with the LM3S3739-IQC50-A0T and experience the benefits of cutting-edge technology in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the microcontroller, ensuring long-lasting performance.

Integrated Cache: YES

Integrated cache enhances the speed and efficiency of the microcontroller by storing frequently used data and instructions closer to the processing unit.

Maximum Supply Voltage: 2.75 V

Operates efficiently within a maximum supply voltage of 2.75V, making it suitable for low power applications.

On Chip Data RAM Width: 8

8-bit wide on-chip data RAM allows for fast and efficient data processing within the microcontroller.

Package Shape: SQUARE

Square package shape provides a compact and space-saving design, suitable for smaller electronic devices.

Bit Size: 32

32-bit architecture allows for high-performance computing and data processing capabilities.

Power Supplies (V): 2.5,3.3

Supports multiple power supply options, making it versatile for different voltage requirements.

No. of Terminals: 100

Having a higher number of terminals provides more connectivity options for peripherals and external components.

Minimum Supply Voltage: 2.25 V

Can operate at low minimum supply voltage, enabling energy-efficient operation.

Maximum Operating Temperature: 85 °C

Capable of operating at high temperatures, suitable for industrial environments.

CPU Family: CORTEX-M3

Part of the Cortex-M3 CPU family known for its high performance and energy efficiency.

Technical Specifications

Microcontrollers LM3S3739-IQC50-A0T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Boundary Scan:

YES

CPU Family:

CORTEX-M3

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

Format:

FIXED POINT

Integrated Cache:

YES

JESD-30 Code:

S-PQFP-G100

JESD-609 Code:

e3

Length:

14 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

0

No. of External Interrupts:

0

No. of I/O Lines:

61

No. of Serial I/Os:

1

No. of Terminals:

100

No. of Timers:

4

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

65536

ROM Words:

131072

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Peripheral IC Type:

Connectivity:

I2C(2), SSI(2), UART(3), USB

Analog To Digital Convertors:

8-Ch 10-Bit

Trade Compliance

LM3S3739-IQC50-A0T Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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