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LM3S328-EQN25-C2T

Texas Instruments

LM3S328-EQN25-C2T by Texas Instruments

Texas Instruments LM3S328-EQN25-C2T microcontroller features 32-bit Cortex-M3 CPU, 4096 bytes RAM, and 8-channel 10-bit ADC. Ideal for industrial applications requiring low power consumption and connectivity through I2C, SSI, and UART interfaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,173 parts In-Stock

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Digiode

USA . 4,062 parts In-Stock

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4,062

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Distributors (Availability)

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One Stop Electronics

USA . 568 parts In-Stock

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$3.000

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568

$3.000

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AZTECH Wire

Italy . 483 parts In-Stock

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$9.748

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483

$9.748

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Parana Technologies

USA . 2,165 parts In-Stock

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$44.384

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$44.384

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DigiPath Technology Company

USA . 472 parts In-Stock

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$48.873

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$44.963

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472

$48.873

$44.963

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ChromeModa Solutions

Germany . 2,822 parts In-Stock

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$49.870

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$40.893

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2,822

$49.870

$40.893

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IDEA Electronic Components Group

UK . 1,938 parts In-Stock

1+ parts

$49.870

100+ parts

$47.376

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$44.883

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1,938

$49.870

$47.376

$44.883

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Component Stockers USA

USA . 530 parts In-Stock

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$99.990

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530

$99.990

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Corphita

USA . 2,755 parts In-Stock

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Authorized Procurement Solutions

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Microchip USA

USA . 264 parts In-Stock

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Overview

Upgrade your projects with the LM3S328-EQN25-C2T microcontroller by Texas Instruments. Crafted with precision and innovation, this versatile device offers high-quality performance for a wide range of applications. With advanced features like integrated cache, low power mode, and multiple connectivity options, this microcontroller provides unparalleled value and benefits to customers. Whether you're designing IoT devices, industrial automation systems, or consumer electronics, the LM3S328-EQN25-C2T delivers superior functionality and reliability, making it the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and cost-effective material for packaging, ensuring protection for the microcontroller.

Integrated Cache: YES

Enhances the performance of the microcontroller by reducing access time to frequently used data and instructions.

Maximum Supply Voltage: 3.6 V

Allows for flexibility in power input, accommodating a range of voltage requirements.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture enables efficient data processing and execution, making the microcontroller suitable for a variety of applications.

No. of I/O Lines: 28

Provides ample input-output capabilities for interfacing with sensors, actuators, and other devices in a system.

ADC Channels: YES

Allows for analog-to-digital conversion, enabling the microcontroller to process analog signals from the environment.

Connectivity: I2C, SSI, UART(2)

Supports multiple communication protocols for connecting with a wide range of peripherals, expanding the microcontroller's functionality.

PWM Channels: YES

Facilitates pulse-width modulation for controlling motor speed, LED brightness, and other applications requiring precise timing control.

ROM Programmability: FLASH

Flash memory allows for easy reprogramming of the microcontroller, enabling firmware updates and customization.

Technical Specifications

Microcontrollers LM3S328-EQN25-C2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Boundary Scan:

YES

CPU Family:

CORTEX-M3

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

Format:

FIXED POINT

Integrated Cache:

YES

JESD-30 Code:

S-PQFP-G48

JESD-609 Code:

e3

Length:

7 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

0

No. of External Interrupts:

0

No. of I/O Lines:

28

No. of Serial I/Os:

4

No. of Terminals:

48

No. of Timers:

3

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP48,.35SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

4096

ROM Words:

16384

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

25 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

65 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7 mm

Peripheral IC Type:

Data EEPROM Size:

0

Connectivity:

I2C, SSI, UART(2)

Peripherals:

TIMER(3), WDT

Analog To Digital Convertors:

8-Ch 10-Bit

Trade Compliance

LM3S328-EQN25-C2T Peripheral ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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