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LM3S316-EQN25-C2

Texas Instruments

LM3S316-EQN25-C2 by Texas Instruments

LM3S316-EQN25-C2 by Texas Instruments is a 32-bit microcontroller with 4096 bytes of RAM and 16384 ROM words. Operating at a max clock frequency of 8.192 MHz, it features 32 I/O lines and PWM channels, making it ideal for industrial applications requiring precise control and data processing within a temperature range of -40 to 105°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,479 parts In-Stock

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Digiode

USA . 1,936 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 285 parts In-Stock

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$12.097

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285

$12.097

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Parana Technologies

USA . 2,017 parts In-Stock

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$19.293

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$19.322

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$19.293

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ChromeModa Solutions

Germany . 5,526 parts In-Stock

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$21.678

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$17.776

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$21.678

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IDEA Electronic Components Group

UK . 795 parts In-Stock

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$21.678

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$20.594

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$19.510

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795

$21.678

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$19.510

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One Stop Electronics

USA . 310 parts In-Stock

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$32.000

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QUARKTWIN TECHNOLOGY LTD

USA . 15,417 parts In-Stock

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Corphita

USA . 4,654 parts In-Stock

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Microchip USA

USA . 3,917 parts In-Stock

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DigiPath Technology Company

USA . 1,318 parts In-Stock

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$19.545

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Overview

Unlock the power of innovation with the LM3S316-EQN25-C2 microcontroller by Texas Instruments. Crafted with precision and expertise, this product offers unparalleled quality and reliability that only a trusted manufacturer like Texas Instruments can provide. Ideal for a wide range of applications, this microcontroller delivers exceptional performance and efficiency. From its advanced features to its ease of use, customers can trust in the value, benefits, and advantages that the LM3S316-EQN25-C2 brings to their projects. Experience the future of technology with this cutting-edge microcontroller.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the microcontroller, ensuring longevity and reliability.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and cost in production.

Maximum Supply Voltage: 3.6 V

Provides flexibility in power supply options and compatibility with various systems.

Bit Size: 32

Offers high computational capabilities and processing power for advanced applications.

RAM Bytes: 4096

Sufficient memory for data storage and manipulation, supporting complex algorithms and processes.

Maximum Clock Frequency: 8.192 MHz

High clock frequency enables fast operation and response times in real-time applications.

Peripheral IC Type: MICROCONTROLLER, RISC

Utilizes Reduced Instruction Set Computing (RISC) architecture for optimized performance and power efficiency.

ADC Channels: YES

Integrated Analog-to-Digital Converter (ADC) allows for interfacing with analog sensors and signals.

ROM Programmability: FLASH

Flash ROM enables easy reprogramming and updating of firmware without removing the microcontroller.

Moisture Sensitivity Level (MSL): 3

Designed to withstand moderate moisture levels, suitable for a wide range of operating environments.

Technical Specifications

Microcontrollers LM3S316-EQN25-C2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

8.192 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G48

Length:

7 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

32

No. of Terminals:

48

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP48,.35SQ,20

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

4096

ROM Words:

16384

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

25 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

65 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7 mm

Peripheral IC Type:

Trade Compliance

LM3S316-EQN25-C2 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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