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LM3S310-IQN25-C2T

Texas Instruments

LM3S310-IQN25-C2T by Texas Instruments

LM3S310-IQN25-C2T by Texas Instruments is a 32-bit microcontroller with 16384 ROM words and 4096 RAM bytes. Operating at a max clock frequency of 0.032 MHz, it is ideal for industrial applications requiring up to 36 I/O lines and PWM channels. With a package style of FLATPACK and GULL WING terminal form, this CMOS technology-based microcontroller offers high performance in a compact design.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,577 parts In-Stock

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Digiode

USA . 901 parts In-Stock

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901

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One Stop Electronics

USA . 906 parts In-Stock

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$12.000

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906

$12.000

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AZTECH Wire

Italy . 891 parts In-Stock

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$18.643

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891

$18.643

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Parana Technologies

USA . 195 parts In-Stock

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$38.557

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ChromeModa Solutions

Germany . 2,430 parts In-Stock

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$43.322

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$35.524

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2,430

$43.322

$35.524

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IDEA Electronic Components Group

UK . 2,253 parts In-Stock

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$43.322

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$41.156

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$38.990

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2,253

$43.322

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$38.990

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Corphita

USA . 2,296 parts In-Stock

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Microchip USA

USA . 240 parts In-Stock

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DigiPath Technology Company

USA . 111 parts In-Stock

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$39.059

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Overview

Unlock the power of innovation with the LM3S310-IQN25-C2T microcontroller by Texas Instruments. Known for their superior quality and cutting-edge technology, Texas Instruments delivers top-of-the-line products that exceed expectations. Designed for a wide range of applications, this microcontroller offers unparalleled value, benefits, and advantages to customers seeking reliable performance and seamless integration. Elevate your projects with the LM3S310-IQN25-C2T and experience the difference that Texas Instruments brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the microcontroller.

Maximum Supply Voltage: 3.6 V

Allows for a higher supply voltage which can be useful in certain applications.

Bit Size: 32

Offers a higher processing capability due to larger bit size.

Package Style (Meter): FLATPACK

Flatpack design allows for easy mounting and integration into systems.

Maximum Operating Temperature: 85 °C

Can withstand higher temperatures, suitable for industrial environments.

ADC Channels: YES

Ability to convert analog signals to digital, useful for many applications.

ROM Words: 16384

Large ROM capacity allows for storing a significant amount of program data.

RAM Bytes: 4096

Adequate RAM size for efficient data processing and storage.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

PWM Channels: YES

Ability to generate pulse width modulated signals for various control applications.

Technical Specifications

Microcontrollers LM3S310-IQN25-C2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G48

Length:

7 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

36

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP48,.35SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

4096

ROM Words:

16384

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

25 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

65 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7 mm

Peripheral IC Type:

Trade Compliance

LM3S310-IQN25-C2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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