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LM3S308-IQN25-C2

Texas Instruments

LM3S308-IQN25-C2 by Texas Instruments

Texas Instruments LM3S308-IQN25-C2 microcontroller features 32-bit CPU, 8KB RAM, and 16KB ROM. Ideal for industrial applications with ADC channels, PWM support, and connectivity options like I2C and UART. Operates at -40 to 85°C with low power mode and boundary scan capability.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 6,913 parts In-Stock

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Digiode

USA . 566 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 60 parts In-Stock

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60

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AZTECH Wire

Italy . 564 parts In-Stock

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$13.889

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Microchip USA

USA . 333 parts In-Stock

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$20.130

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$19.990

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$19.990

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$19.840

333

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$19.990

$19.840

Parana Technologies

USA . 1,111 parts In-Stock

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$22.963

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$2,132.453

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$20.667

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DigiPath Technology Company

USA . 1,675 parts In-Stock

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$25.285

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$25.285

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ChromeModa Solutions

Germany . 4,496 parts In-Stock

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$25.801

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$21.157

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IDEA Electronic Components Group

UK . 1,475 parts In-Stock

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$25.801

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$24.511

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$23.221

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One Stop Electronics

USA . 1,642 parts In-Stock

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$29.000

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Lixinc

USA . 12,389 parts In-Stock

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Authorized Procurement Solutions

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Corphita

USA . 2,429 parts In-Stock

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Overview

Unleash the power of innovation with the LM3S308-IQN25-C2 microcontroller from Texas Instruments. As a leader in cutting-edge technology, Texas Instruments delivers top-quality products that meet the highest standards in the industry. This versatile microcontroller is perfect for a wide range of applications, offering unmatched performance and reliability. Experience the value and benefits of this product as it provides seamless connectivity and advanced features, making it the ideal choice for all your project needs. Elevate your designs with the LM3S308-IQN25-C2 and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the microcontroller, ensuring longevity and reliability in various operating conditions.

Integrated Cache: YES

Enhances processing speed by storing frequently accessed data, leading to improved overall performance of the microcontroller.

Maximum Supply Voltage: 3.6 V

Allows for a higher voltage input, making the microcontroller compatible with a wider range of power sources.

CPU Family: CORTEX-M3

Utilizes advanced Cortex-M3 technology, known for its high performance and energy efficiency, making it a reliable choice for various applications.

RAM Bytes: 4096

Offers a generous amount of random access memory, allowing for efficient data storage and retrieval during operation.

ADC Channels: YES

Includes analog-to-digital converter channels, enabling the microcontroller to interact with and process analog signals, expanding its functionality.

Connectivity: I2C, SSI, UART(2)

Supports various communication protocols such as I2C, SSI, and UART, making it versatile and easily connectable to other devices or systems.

Technical Specifications

Microcontrollers LM3S308-IQN25-C2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Boundary Scan:

YES

CPU Family:

CORTEX-M3

Maximum Clock Frequency:

25 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

Format:

FIXED POINT

Integrated Cache:

YES

JESD-30 Code:

S-PQFP-G48

JESD-609 Code:

e4

Length:

7 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

0

No. of External Interrupts:

0

No. of I/O Lines:

28

No. of Serial I/Os:

4

No. of Terminals:

48

No. of Timers:

3

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP48,.35SQ,20

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

4096

ROM Words:

16384

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

25 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

65 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7 mm

Peripheral IC Type:

Data EEPROM Size:

0

Connectivity:

I2C, SSI, UART(2)

Peripherals:

TIMER(4), WDT

Analog To Digital Convertors:

8-Ch 10-Bit

Trade Compliance

LM3S308-IQN25-C2 Peripheral ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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