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LM3S308-IGZ25-C2T

Texas Instruments

LM3S308-IGZ25-C2T by Texas Instruments

Texas Instruments LM3S308-IGZ25-C2T is a 32-bit microcontroller with 3.3V supply, 25MHz clock frequency, and 4096 bytes of RAM. Ideal for industrial applications, it features ADC and PWM channels, FLASH ROM programmability, and operates in temperatures ranging from -40 to 85°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,053 parts In-Stock

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Digiode

USA . 1,810 parts In-Stock

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AZTECH Wire

Italy . 223 parts In-Stock

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$8.963

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One Stop Electronics

USA . 1,043 parts In-Stock

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$34.000

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Parana Technologies

USA . 1,563 parts In-Stock

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$74.655

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ChromeModa Solutions

Germany . 3,603 parts In-Stock

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$83.882

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$68.783

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$83.882

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IDEA Electronic Components Group

UK . 1,172 parts In-Stock

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$83.882

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$79.688

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$75.494

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Corphita

USA . 3,984 parts In-Stock

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Microchip USA

USA . 3,968 parts In-Stock

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DigiPath Technology Company

USA . 821 parts In-Stock

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$75.628

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Overview

Unlock the potential of your projects with the LM3S308-IGZ25-C2T by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality microcontrollers that are perfect for a wide range of applications. With a 32-bit architecture and a maximum clock frequency of 25 MHz, this microcontroller offers unparalleled performance and reliability. Whether you're working on robotics, industrial automation, or consumer electronics, this chip carrier package with very thin profile is sure to meet your needs. Experience the value and benefits of Texas Instruments' innovative technology with the LM3S308-IGZ25-C2T microcontroller.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy installation and replacement of the microcontroller, making it convenient for use in various applications.

Maximum Supply Voltage: 3.6 V

The higher maximum supply voltage allows for flexibility in power supply options while ensuring the stability and reliability of the microcontroller.

Package Shape: SQUARE

The square package shape provides a compact form factor, making it easy to integrate the microcontroller into space-constrained designs.

Bit Size: 32

The 32-bit architecture allows for high processing power and efficiency, enabling the microcontroller to handle complex tasks efficiently.

Power Supplies (V): 3.3

The standard power supply voltage of 3.3V ensures compatibility with a wide range of electronic components and systems.

No. of Terminals: 48

Having 48 terminals provides ample connectivity options for interfacing with external devices, sensors, and peripherals.

Minimum Operating Temperature: -40 °C

The wide operating temperature range allows the microcontroller to function in harsh environmental conditions without compromising performance.

ADC Channels: YES

The presence of Analog-to-Digital Converter (ADC) channels enables the microcontroller to read analog signals from sensors and convert them into digital values for processing.

Maximum Clock Frequency: 25 MHz

With a maximum clock frequency of 25 MHz, the microcontroller can execute instructions quickly, enhancing overall system performance.

RAM Bytes: 4096

The generous amount of RAM allows for efficient data storage and processing, ensuring smooth operation of the microcontroller-based system.

Technical Specifications

Microcontrollers LM3S308-IGZ25-C2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

25 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-XQCC-N48

Length:

6.875 mm

No. of I/O Lines:

28

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

4096

ROM Words:

16384

ROM Programmability:

FLASH

Maximum Seated Height:

1 mm

Speed:

25 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

65 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6.875 mm

Peripheral IC Type:

Trade Compliance

LM3S308-IGZ25-C2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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