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LM3S301-IGZ20-C2

Texas Instruments

LM3S301-IGZ20-C2 by Texas Instruments

LM3S301-IGZ20-C2 by Texas Instruments is a 32-bit microcontroller with 2048 bytes of RAM and 16384 ROM words. It operates at a max clock frequency of 20 MHz, suitable for industrial applications requiring up to 33 I/O lines and PWM channels. With a package style of CHIP CARRIER, it offers ADC channels and runs on a supply voltage range from 3V to 3.6V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,522 parts In-Stock

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Digiode

USA . 3,241 parts In-Stock

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AZTECH Wire

Italy . 644 parts In-Stock

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$9.483

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Parana Technologies

USA . 1,612 parts In-Stock

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ChromeModa Solutions

Germany . 5,815 parts In-Stock

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IDEA Electronic Components Group

UK . 713 parts In-Stock

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One Stop Electronics

USA . 592 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Corphita

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Microchip USA

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Metaverse IC Inc.

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DigiPath Technology Company

USA . 1,086 parts In-Stock

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Kepictronics

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Overview

Looking for a reliable microcontroller? Look no further than the LM3S301-IGZ20-C2 by Texas Instruments! With a reputation for quality and innovation, Texas Instruments delivers top-notch products like this one. Perfect for a wide range of applications, this microcontroller offers unmatched value and benefits to customers. Whether you're designing a new project or upgrading an existing one, the LM3S301-IGZ20-C2 provides the power and flexibility you need to succeed. Choose Texas Instruments for superior performance and peace of mind.

Feature Benefit Bullets

Surface Mount: YES

Can be easily mounted on a circuit board, making it suitable for compact designs.

Maximum Supply Voltage: 3.6 V

Allows for versatility in power supply options.

Package Shape: SQUARE

Square shape may be more space-efficient in certain layouts.

Bit Size: 32

Offers a good balance between performance and power efficiency.

Power Supplies (V): 3.3

Standard voltage for compatibility with many applications.

No. of Terminals: 48

Sufficient number of terminals for connecting peripherals and interfaces.

Minimum Operating Temperature: -40 °C

Can operate in extreme low-temperature environments.

Maximum Clock Frequency: 20 MHz

High clock frequency allows for fast processing speed.

ROM Words: 16384

Large ROM capacity for storing program instructions or data.

RAM Bytes: 2048

Adequate RAM for temporary data storage during operation.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture provides efficient processing capabilities.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

ROM Programmability: FLASH

Flash ROM enables easy reprogramming of the device without requiring specialized equipment.

Technical Specifications

Microcontrollers LM3S301-IGZ20-C2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

20 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-XQCC-N48

Length:

6.875 mm

No. of I/O Lines:

33

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

2048

ROM Words:

16384

ROM Programmability:

FLASH

Maximum Seated Height:

1 mm

Speed:

20 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

50 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6.875 mm

Peripheral IC Type:

Trade Compliance

LM3S301-IGZ20-C2 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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