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LM3S2608-IQC50-A2T

Texas Instruments

LM3S2608-IQC50-A2T by Texas Instruments

Texas Instruments LM3S2608-IQC50-A2T microcontroller features 32-bit Cortex-M3 CPU, 131072 ROM words, and 32768 RAM bytes. Ideal for industrial applications, it offers CAN, I2C(2), SSI(2), UART(2) connectivity and low power mode with a max clock frequency of 0.032 MHz.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,604 parts In-Stock

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Digiode

USA . 1,809 parts In-Stock

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Sensible Micro Corp

USA . 325 parts In-Stock

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325

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Distributors (Availability)

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One Stop Electronics

USA . 721 parts In-Stock

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$6.000

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721

$6.000

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AZTECH Wire

Italy . 499 parts In-Stock

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$8.137

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499

$8.137

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Parana Technologies

USA . 725 parts In-Stock

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$41.083

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725

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DigiPath Technology Company

USA . 2,337 parts In-Stock

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$45.238

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2,337

$45.238

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ChromeModa Solutions

Germany . 2,190 parts In-Stock

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$46.161

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$37.852

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$46.161

$37.852

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IDEA Electronic Components Group

UK . 318 parts In-Stock

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$46.161

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$43.853

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$41.545

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$41.545

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Microchip USA

USA . 2,674 parts In-Stock

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$64.770

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$63.640

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$63.080

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$62.520

2,674

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$63.640

$63.080

$62.520

Component Stockers USA

USA . 771 parts In-Stock

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$99.990

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Corphita

USA . 3,142 parts In-Stock

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Overview

Experience unmatched quality and performance with the LM3S2608-IQC50-A2T microcontroller by Texas Instruments. As a leader in the industry, Texas Instruments ensures top-notch reliability and precision in all their products. This microcontroller is perfect for a wide range of applications, from industrial automation to consumer electronics. With its integrated cache and low power mode, this device offers exceptional value and benefits to customers looking for efficient and reliable solutions. Upgrade your projects with the LM3S2608-IQC50-A2T and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the microcontroller lightweight and durable, ideal for portable and rugged applications.

Integrated Cache: YES

Having an integrated cache enhances the performance of the microcontroller by reducing access time to frequently used data, resulting in faster processing speeds.

Maximum Supply Voltage: 2.75 V

The maximum supply voltage of 2.75 V ensures efficient power consumption and safe operation within specified voltage limits.

CPU Family: CORTEX-M3

Being part of the Cortex-M3 family signifies high performance, low power consumption, and efficient processing capabilities for embedded applications.

ADC Channels: YES

The presence of Analog to Digital Convertor (ADC) channels allows the microcontroller to interface with analog sensors and signals, enabling a wide range of input options.

ROM Programmability: FLASH

The use of Flash memory for ROM programmability provides flexibility for firmware updates and reprogramming without the need for external memory devices, enhancing ease of use and adaptability.

Connectivity: CAN, I2C(2), SSI(2), UART(2)

Multiple connectivity options such as CAN, I2C, SSI, and UART enable seamless communication with various external devices and peripherals, making the microcontroller suitable for diverse system integration requirements.

Technical Specifications

Microcontrollers LM3S2608-IQC50-A2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Boundary Scan:

YES

CPU Family:

CORTEX-M3

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

Format:

FIXED POINT

Integrated Cache:

YES

JESD-30 Code:

S-PQFP-G100

JESD-609 Code:

e4

Length:

14 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

0

No. of External Interrupts:

0

No. of I/O Lines:

52

No. of Serial I/Os:

7

No. of Terminals:

100

No. of Timers:

4

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

32768

ROM Words:

131072

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Peripheral IC Type:

Data EEPROM Size:

0

Connectivity:

CAN, I2C(2), SSI(2), UART(2)

Peripherals:

TIMER(4), WDT

Analog To Digital Convertors:

8-Ch 10-Bit

Trade Compliance

LM3S2608-IQC50-A2T Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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