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LM3S2412-IBZ25-A2

Texas Instruments

LM3S2412-IBZ25-A2 by Texas Instruments

LM3S2412-IBZ25-A2 by Texas Instruments is a 32-bit microcontroller with 108 terminals, operating at a max frequency of 0.032 MHz. It features 32768 bytes of RAM, flash ROM programmability, and PWM channels. Ideal for industrial applications requiring a reliable and efficient microcontroller solution.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,004 parts In-Stock

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4,004

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Digiode

USA . 3,497 parts In-Stock

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3,497

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Distributors (Availability)

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AZTECH Wire

Italy . 192 parts In-Stock

1+ parts

$11.709

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192

$11.709

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One Stop Electronics

USA . 436 parts In-Stock

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$26.000

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436

$26.000

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Microchip USA

USA . 1,191 parts In-Stock

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$45.140

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$44.500

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$44.180

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$43.850

1,191

$45.140

$44.500

$44.180

$43.850

Parana Technologies

USA . 1,682 parts In-Stock

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$50.042

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1,682

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DigiPath Technology Company

USA . 100 parts In-Stock

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$55.102

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100

$55.102

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ChromeModa Solutions

Germany . 6,195 parts In-Stock

1+ parts

$56.227

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$46.106

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6,195

$56.227

$46.106

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IDEA Electronic Components Group

UK . 12 parts In-Stock

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$56.227

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$53.416

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$50.604

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12

$56.227

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Advanced Electronics

New Zealand . 25 parts In-Stock

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$56.910

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$51.788

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$46.666

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25

$56.910

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$46.666

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Corphita

USA . 4,954 parts In-Stock

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Overview

Elevate your projects with the LM3S2412-IBZ25-A2 microcontroller by Texas Instruments! Designed with precision and reliability in mind, this powerful device offers unmatched performance and versatility for a wide range of applications. Whether you're working on IoT devices, robotics, or industrial automation, this microcontroller provides exceptional value, efficiency, and ease of use. Trust in Texas Instruments' expertise in the field and unlock endless possibilities with the LM3S2412-IBZ25-A2.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the microcontroller, ensuring a longer lifespan.

Maximum Supply Voltage: 2.75 V

Allows for safe operation within a specified voltage range, reducing the risk of damage.

Bit Size: 32

Offers a high-performance computing capability for various applications.

ADC Channels: YES

Enables analog-to-digital conversion, crucial for interacting with the external world.

ROM Words: 98304

Provides ample storage for program instructions, data, and firmware.

RAM Bytes: 32768

Offers sufficient memory for data processing and temporary storage.

PWM Channels: YES

Allows for precise control of connected devices through pulse width modulation.

ROM Programmability: FLASH

Enables easy reprogramming of memory without the need for specialized equipment.

Technology: CMOS

Delivers low power consumption and high speed performance, ideal for energy-efficient applications.

Technical Specifications

Microcontrollers LM3S2412-IBZ25-A2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PBGA-B108

JESD-609 Code:

e1

Length:

10 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

49

No. of Terminals:

108

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA108,12X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

32768

ROM Words:

98304

ROM Programmability:

FLASH

Maximum Seated Height:

1.5 mm

Speed:

25 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10 mm

Peripheral IC Type:

Trade Compliance

LM3S2412-IBZ25-A2 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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