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LM3S1J11-IQC50-C3

Texas Instruments

LM3S1J11-IQC50-C3 by Texas Instruments

LM3S1J11-IQC50-C3 by Texas Instruments is a 32-bit microcontroller with 131072 ROM words and 20480 RAM bytes. It operates at a max clock frequency of 16 MHz, suitable for industrial applications requiring high-speed processing and multiple ADC/DMA channels. With a compact square package style and low profile, it's ideal for space-constrained designs in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,472 parts In-Stock

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Vyrian

USA . 4,419 parts In-Stock

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4,419

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One Stop Electronics

USA . 142 parts In-Stock

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$3.000

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142

$3.000

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AZTECH Wire

Italy . 526 parts In-Stock

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$15.366

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526

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Parana Technologies

USA . 1,340 parts In-Stock

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$58.604

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$5,442.255

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$52.743

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1,340

$58.604

$5,442.255

$52.743

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DigiPath Technology Company

USA . 1,960 parts In-Stock

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$64.530

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ChromeModa Solutions

Germany . 4,142 parts In-Stock

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$65.847

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$53.995

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$65.847

$53.995

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IDEA Electronic Components Group

UK . 1,862 parts In-Stock

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$65.847

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$62.555

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$59.262

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1,862

$65.847

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$59.262

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QUARKTWIN TECHNOLOGY LTD

USA . 9,330 parts In-Stock

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Corphita

USA . 1,752 parts In-Stock

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Microchip USA

USA . 391 parts In-Stock

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Overview

Unleash the power of innovation with the LM3S1J11-IQC50-C3 microcontroller from Texas Instruments. Designed with precision and expertise, this cutting-edge device offers unparalleled performance in a compact package. Ideal for a wide range of applications, this microcontroller boasts advanced features such as ADC channels, DMA channels, PWM channels, and ROM programmability. With a maximum clock frequency of 16 MHz and a temperature grade suitable for industrial use, the LM3S1J11-IQC50-C3 delivers reliable and efficient operation. Elevate your projects to new heights with this high-quality microcontroller that brings value, benefits, and advantages to every customer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the microcontroller, ensuring it can withstand various environmental conditions.

Maximum Supply Voltage: 3.6 V

With a maximum supply voltage of 3.6 V, this microcontroller can handle higher power requirements efficiently.

Bit Size: 32

A 32-bit microcontroller offers superior processing power and efficiency compared to lower bit sizes, making it suitable for complex applications.

ADC Channels: YES

Having ADC channels allows the microcontroller to convert analog signals into digital data, enabling it to interface with a variety of sensors and devices.

DMA Channels: YES

DMA channels enable direct memory access, improving data transfer speeds and freeing up the CPU to focus on other tasks, enhancing overall performance.

ROM Words: 131072

With a large ROM size, this microcontroller can store a significant amount of program code, allowing for complex software applications to be implemented.

RAM Bytes: 20480

The ample RAM capacity enables the microcontroller to efficiently handle data processing and storage requirements, facilitating smooth operation of applications.

Peripheral IC Type: MICROCONTROLLER

Being a microcontroller, this product combines processing capabilities with built-in peripherals, simplifying the design of embedded systems and reducing component count.

Technical Specifications

Microcontrollers LM3S1J11-IQC50-C3 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

16 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G100

Length:

14 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

67

No. of Terminals:

100

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2,3.3

Qualification:

Not Qualified

RAM Bytes:

20480

ROM Words:

131072

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Peripheral IC Type:

Trade Compliance

LM3S1J11-IQC50-C3 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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