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LM3S1B21-IBZ80-C3

Texas Instruments

LM3S1B21-IBZ80-C3 by Texas Instruments

LM3S1B21-IBZ80-C3 by Texas Instruments is a 32-bit microcontroller with 262144 ROM words and 98304 RAM bytes. It operates at a max clock frequency of 16 MHz, suitable for industrial applications requiring high-speed processing and multiple PWM channels. With a package style of grid array and terminal finish of tin silver copper, it offers versatile connectivity options for various electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,581 parts In-Stock

1+ parts

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8,581

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Digiode

USA . 3,972 parts In-Stock

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3,972

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 276 parts In-Stock

1+ parts

$6.969

100+ parts

-

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276

$6.969

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One Stop Electronics

USA . 1,504 parts In-Stock

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$19.000

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1,504

$19.000

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Parana Technologies

USA . 664 parts In-Stock

1+ parts

$74.687

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664

$74.687

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DigiPath Technology Company

USA . 2,273 parts In-Stock

1+ parts

$82.240

100+ parts

$75.660

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2,273

$82.240

$75.660

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IDEA Electronic Components Group

UK . 1,745 parts In-Stock

1+ parts

$83.918

100+ parts

$79.722

1k+ parts

$75.526

10k+ parts

-

1,745

$83.918

$79.722

$75.526

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ChromeModa Solutions

Germany . 187 parts In-Stock

1+ parts

$83.918

100+ parts

$68.813

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187

$83.918

$68.813

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Corphita

USA . 3,245 parts In-Stock

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3,245

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Microchip USA

USA . 391 parts In-Stock

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391

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Overview

Elevate your projects to the next level with the LM3S1B21-IBZ80-C3 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments sets the standard for quality and reliability. This microcontroller is versatile, offering a wide range of applications, from industrial automation to consumer electronics. With its advanced features and innovative design, the LM3S1B21-IBZ80-C3 provides exceptional value and performance. Trust in Texas Instruments to deliver cutting-edge technology that will exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the microcontroller, ensuring a longer lifespan.

Surface Mount: YES

Simplifies the installation process and saves space on the PCB.

Maximum Supply Voltage: 3.6 V

Allows flexibility in power supply options.

Bit Size: 32

Provides a good balance between performance and power consumption.

Power Supplies (V): 1.2,3.3

Suitable for various power input requirements.

No. of Terminals: 108

Offers a high level of connectivity for peripherals and external devices.

ROM Words: 262144

Provides ample storage capacity for program memory.

Maximum Clock Frequency: 16 MHz

Delivers fast processing speeds for efficient operation.

Temperature Grade: INDUSTRIAL

Suitable for industrial environments with wide temperature ranges.

Peripheral IC Type: MICROCONTROLLER

Designed specifically for microcontroller applications.

RAM Bytes: 98304

Offers sufficient memory for data storage and processing.

Moisture Sensitivity Level (MSL): 3

Indicates the level of protection against moisture, ensuring reliability in different environments.

Technical Specifications

Microcontrollers LM3S1B21-IBZ80-C3 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

16 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

JESD-30 Code:

S-PBGA-B108

JESD-609 Code:

e1

Length:

10 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

67

No. of Terminals:

108

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA108,12X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2,3.3

Qualification:

Not Qualified

RAM Bytes:

98304

ROM Words:

262144

ROM Programmability:

FLASH

Maximum Seated Height:

1.5 mm

Speed:

80 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10 mm

Peripheral IC Type:

Trade Compliance

LM3S1B21-IBZ80-C3 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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