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LM3S1937-EQC50-A2T

Texas Instruments

LM3S1937-EQC50-A2T by Texas Instruments

Texas Instruments LM3S1937-EQC50-A2T is a 32-bit microcontroller with 262144 ROM words and 65536 RAM bytes. Operating at up to 0.032 MHz, it features 56 I/O lines and PWM channels for industrial applications requiring high-speed processing in a compact, low-power package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,759 parts In-Stock

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2,759

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Vyrian

USA . 2,129 parts In-Stock

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2,129

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Distributors (Availability)

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AZTECH Wire

Italy . 460 parts In-Stock

1+ parts

$19.758

100+ parts

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460

$19.758

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One Stop Electronics

USA . 201 parts In-Stock

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$29.000

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201

$29.000

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Parana Technologies

USA . 1,623 parts In-Stock

1+ parts

$33.983

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$138.846

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1,623

$33.983

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$138.846

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DigiPath Technology Company

USA . 816 parts In-Stock

1+ parts

$37.419

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$34.426

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816

$37.419

$34.426

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ChromeModa Solutions

Germany . 4,411 parts In-Stock

1+ parts

$38.183

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$31.310

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4,411

$38.183

$31.310

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IDEA Electronic Components Group

UK . 2,317 parts In-Stock

1+ parts

$38.183

100+ parts

$36.274

1k+ parts

$34.365

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2,317

$38.183

$36.274

$34.365

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Microchip USA

USA . 2,342 parts In-Stock

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2,342

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Corphita

USA . 453 parts In-Stock

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453

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Overview

Experience unmatched quality and reliability with the LM3S1937-EQC50-A2T microcontroller by Texas Instruments. As a leader in the industry, Texas Instruments delivers cutting-edge technology that meets the highest standards. This versatile microcontroller is perfect for a wide range of applications, providing customers with exceptional value and performance. Whether you're working on IoT devices, industrial automation, or consumer electronics, trust the LM3S1937-EQC50-A2T to deliver superior results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the microcontroller, making it suitable for various applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving space and simplifying the manufacturing process.

Maximum Supply Voltage: 2.75 V

Being able to operate at a maximum supply voltage of 2.75 V makes this microcontroller energy-efficient and suitable for low power applications.

Bit Size: 32

A 32-bit architecture provides enhanced processing capabilities, allowing for complex computations and tasks to be performed efficiently.

No. of Terminals: 100

Having 100 terminals allows for versatile connectivity options, enabling the microcontroller to interface with a wide range of external devices and components.

ROM Words: 262144

With 262144 ROM words, this microcontroller offers ample storage capacity for program code and data, making it suitable for applications requiring large memory storage.

RAM Bytes: 65536

A large RAM capacity of 65536 bytes enables efficient data processing and storage, facilitating the execution of multiple tasks simultaneously.

ADC Channels: YES

The presence of ADC channels allows the microcontroller to interface with analog sensors and devices, enabling precise and accurate data conversion.

PWM Channels: YES

Having PWM channels enables the microcontroller to generate analog voltage levels, making it suitable for applications requiring adjustable output signals.

ROM Programmability: FLASH

A FLASH ROM programmability feature allows for easy and convenient reprogramming of the microcontroller, facilitating software updates and modifications.

Technical Specifications

Microcontrollers LM3S1937-EQC50-A2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G100

JESD-609 Code:

e3

Length:

14 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

56

No. of Terminals:

100

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

65536

ROM Words:

262144

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

14 mm

Peripheral IC Type:

Trade Compliance

LM3S1937-EQC50-A2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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