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LM3S1626-IQR50-A0T

Texas Instruments

LM3S1626-IQR50-A0T by Texas Instruments

Texas Instruments' LM3S1626-IQR50-A0T microcontroller features a 32-bit Cortex-M3 CPU, 131072 ROM words, and 32768 RAM bytes. With 6-Ch 10-Bit ADCs, PWM channels, and connectivity options like I2C and UART(2), it's ideal for industrial applications requiring low power consumption and high-speed processing at temperatures ranging from -40 to 85°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,331 parts In-Stock

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Digiode

USA . 3,330 parts In-Stock

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3,330

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Distributors (Availability)

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AZTECH Wire

Italy . 508 parts In-Stock

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$18.376

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One Stop Electronics

USA . 1,027 parts In-Stock

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$19.000

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Ampacity Inc.

Singapore . 364 parts In-Stock

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$32.000

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364

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Parana Technologies

USA . 1,158 parts In-Stock

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$76.783

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DigiPath Technology Company

USA . 1,576 parts In-Stock

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$84.548

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$77.784

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ChromeModa Solutions

Germany . 5,451 parts In-Stock

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$86.273

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$70.744

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IDEA Electronic Components Group

UK . 1,795 parts In-Stock

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$86.273

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$81.959

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$77.646

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QUARKTWIN TECHNOLOGY LTD

USA . 7,259 parts In-Stock

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Corphita

USA . 4,661 parts In-Stock

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Microchip USA

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Overview

Elevate your projects with the LM3S1626-IQR50-A0T from Texas Instruments. As a leading manufacturer of high-quality microcontrollers, Texas Instruments delivers top-notch performance and reliability. With integrated cache, multiple peripherals, and low power mode, this microcontroller is perfect for a wide range of applications. Whether you're working on robotics, industrial control systems, or IoT devices, the LM3S1626-IQR50-A0T offers unmatched value and efficiency. Trust in Texas Instruments to bring your designs to life with cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the microcontroller, making it suitable for various environments.

Integrated Cache: YES

The integrated cache helps in improving the processing speed and efficiency of the microcontroller.

Maximum Supply Voltage: 2.75 V

The low maximum supply voltage ensures energy efficiency and safe operation of the microcontroller.

On Chip Data RAM Width: 8

Having a wider data RAM width allows for faster data processing and storage capabilities.

Bit Size: 32

A 32-bit architecture enables the microcontroller to handle larger calculations and perform more complex tasks.

No. of Terminals: 64

A higher number of terminals allow for more connectivity options and versatility in hardware interfacing.

CPU Family: CORTEX-M3

Being part of the Cortex-M3 family ensures high performance, low power consumption, and scalability in applications.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture provides faster execution of instructions and efficient resource utilization in the microcontroller.

Maximum Clock Frequency: 16.384 MHz

A high clock frequency allows for faster data processing and real-time operation in the microcontroller.

Analog To Digital Convertors: 6-Ch 10-Bit

Multiple ADC channels with 10-bit resolution enable precise analog signal conversion for accurate sensor data acquisition.

Technical Specifications

Microcontrollers LM3S1626-IQR50-A0T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Boundary Scan:

YES

CPU Family:

CORTEX-M3

Maximum Clock Frequency:

16.384 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

Format:

FIXED POINT

Integrated Cache:

YES

JESD-30 Code:

S-PQFP-G64

JESD-609 Code:

e3

Length:

10 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

1

No. of External Interrupts:

0

No. of I/O Lines:

33

No. of Serial I/Os:

4

No. of Terminals:

64

No. of Timers:

4

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP64,.47SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

32768

ROM Words:

131072

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10 mm

Peripheral IC Type:

Data EEPROM Size:

0

Connectivity:

I2C, SSI, UART(2)

Peripherals:

DMA, PWM(4), QEI, TIMER(4), WDT

Analog To Digital Convertors:

6-Ch 10-Bit

Trade Compliance

LM3S1626-IQR50-A0T Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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