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LM3S1608-IBZ50-A2T

Texas Instruments

LM3S1608-IBZ50-A2T by Texas Instruments

LM3S1608-IBZ50-A2T by Texas Instruments is a 32-bit microcontroller with 131072 ROM words and 32768 RAM bytes. It operates at a max clock frequency of 8.192 MHz, suitable for industrial applications requiring high-speed processing and control capabilities. With 52 I/O lines and PWM channels, it offers versatile connectivity options in a compact square package ideal for space-constrained designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,927 parts In-Stock

1+ parts

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5,927

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Digiode

USA . 3,920 parts In-Stock

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3,920

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 500 parts In-Stock

1+ parts

$19.229

100+ parts

-

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500

$19.229

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One Stop Electronics

USA . 1,593 parts In-Stock

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$24.000

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1,593

$24.000

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Microchip USA

USA . 3,553 parts In-Stock

1+ parts

$46.730

100+ parts

$45.910

1k+ parts

$45.510

10k+ parts

$45.100

3,553

$46.730

$45.910

$45.510

$45.100

Parana Technologies

USA . 601 parts In-Stock

1+ parts

$60.225

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601

$60.225

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DigiPath Technology Company

USA . 1,123 parts In-Stock

1+ parts

$66.316

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1,123

$66.316

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ChromeModa Solutions

Germany . 6,491 parts In-Stock

1+ parts

$67.669

100+ parts

$55.489

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6,491

$67.669

$55.489

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IDEA Electronic Components Group

UK . 1,513 parts In-Stock

1+ parts

$67.669

100+ parts

$64.286

1k+ parts

$60.902

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1,513

$67.669

$64.286

$60.902

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Corphita

USA . 4,375 parts In-Stock

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4,375

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Overview

Unlock the power of innovation with the LM3S1608-IBZ50-A2T microcontroller by Texas Instruments. Crafted with precision and expertise, this product boasts exceptional quality and reliability that Texas Instruments is known for. Ideal for a wide range of applications, this microcontroller offers unmatched performance and efficiency to bring your projects to life. Experience seamless operation, advanced functionality, and unparalleled value with the LM3S1608-IBZ50-A2T - where excellence meets ingenuity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and ensures protection of internal components.

Surface Mount: YES

Allows for easy installation on circuit boards.

Maximum Supply Voltage: 2.75 V

Optimal voltage for efficient performance.

Bit Size: 32

Higher bit size allows for more complex operations and calculations.

Power Supplies (V): 2.5,3.3

Supports multiple power supply options for flexibility.

No. of Terminals: 108

Provides ample connection points for interfacing with external devices.

Minimum Operating Temperature: -40 °C

Can operate in extreme low temperature environments.

ADC Channels: YES

Allows for analog to digital conversion for sensor input integration.

ROM Words: 131072

Large ROM size for storing program instructions and data.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

PWM Channels: YES

Enables precise control over pulse width modulation outputs.

Technical Specifications

Microcontrollers LM3S1608-IBZ50-A2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

8.192 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PBGA-B108

JESD-609 Code:

e1

Length:

10 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

52

No. of Terminals:

108

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA108,12X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

32768

ROM Words:

131072

ROM Programmability:

FLASH

Maximum Seated Height:

1.5 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10 mm

Peripheral IC Type:

Trade Compliance

LM3S1608-IBZ50-A2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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