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LM3S1165-IQC50-A2T

Texas Instruments

LM3S1165-IQC50-A2T by Texas Instruments

Texas Instruments LM3S1165-IQC50-A2T microcontroller features 32-bit Cortex-M3 CPU, 16384 bytes RAM, and 4 ADC channels. Ideal for industrial applications with peripherals like PWM(6) and TIMER(4), operating at -40 to 85°C temperature range. Package style is flatpack with a square shape, suitable for surface mount assembly.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,734 parts In-Stock

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Digiode

USA . 4,488 parts In-Stock

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4,488

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Distributors (Availability)

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Ampacity Inc.

Singapore . 733 parts In-Stock

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$12.000

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733

$12.000

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AZTECH Wire

Italy . 390 parts In-Stock

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$12.482

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390

$12.482

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Parana Technologies

USA . 495 parts In-Stock

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$26.631

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$27.190

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495

$26.631

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$27.190

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ChromeModa Solutions

Germany . 3,231 parts In-Stock

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$29.923

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$24.537

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3,231

$29.923

$24.537

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IDEA Electronic Components Group

UK . 666 parts In-Stock

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$29.923

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$28.427

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$26.931

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666

$29.923

$28.427

$26.931

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One Stop Electronics

USA . 671 parts In-Stock

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$32.000

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671

$32.000

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Corphita

USA . 4,136 parts In-Stock

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DigiPath Technology Company

USA . 279 parts In-Stock

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$26.979

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Microchip USA

USA . 236 parts In-Stock

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Overview

Discover the LM3S1165-IQC50-A2T by Texas Instruments, a top-quality microcontroller that is designed to meet your needs with precision and reliability. With a focus on cutting-edge technology, Texas Instruments ensures that their products are built to last, offering seamless connectivity and efficient performance. This versatile microcontroller is perfect for a wide range of applications, from industrial automation to consumer electronics. Experience the value and benefits that the LM3S1165-IQC50-A2T brings to your projects, delivering superior results every time. Elevate your designs with this powerful component from Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product suitable for various applications without adding unnecessary weight.

Integrated Cache: YES

Having an integrated cache improves the performance of the microcontroller by reducing access time to frequently used data and instructions.

ADC Channels: YES

The availability of Analog to Digital Convertor channels allows the microcontroller to interface with analog sensors and signals, expanding its capabilities in real-world applications.

Peripheral IC Type: MICROCONTROLLER, RISC

Being a Reduced Instruction Set Computing (RISC) microcontroller, it offers efficient and streamlined processing, enhancing overall performance and power efficiency.

ROM Programmability: FLASH

The use of flash memory for ROM allows for easy reprogramming and updating of firmware, making the product versatile and adaptable to changing requirements.

Connectivity: I2C, SSI(2), UART(3)

Support for multiple communication interfaces like I2C, SSI, and UART enables seamless connectivity with other devices and systems, enhancing the microcontroller's versatility in networking applications.

Technical Specifications

Microcontrollers LM3S1165-IQC50-A2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Boundary Scan:

YES

CPU Family:

CORTEX-M3

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

Format:

FIXED POINT

Integrated Cache:

YES

JESD-30 Code:

S-PQFP-G100

JESD-609 Code:

e3

Length:

14 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

0

No. of External Interrupts:

0

No. of I/O Lines:

43

No. of Serial I/Os:

6

No. of Terminals:

100

No. of Timers:

4

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

16384

ROM Words:

65536

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Peripheral IC Type:

Data EEPROM Size:

0

Connectivity:

I2C, SSI(2), UART(3)

Peripherals:

PWM(6), TIMER(4), WDT

Analog To Digital Convertors:

4-Ch 10-Bit

Trade Compliance

LM3S1165-IQC50-A2T Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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