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LM3S1165-IBZ50-A2

Texas Instruments

LM3S1165-IBZ50-A2 by Texas Instruments

LM3S1165-IBZ50-A2 by Texas Instruments is a 32-bit microcontroller with 108 terminals, operating at a max frequency of 0.032 MHz. It features 43 I/O lines, FLASH ROM programmability, and ADC channels. Ideal for industrial applications requiring a compact design and low power consumption.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,250 parts In-Stock

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6,250

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Digiode

USA . 1,172 parts In-Stock

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1,172

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Distributors (Availability)

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AZTECH Wire

Italy . 743 parts In-Stock

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$17.764

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743

$17.764

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One Stop Electronics

USA . 1,485 parts In-Stock

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$24.000

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$24.000

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Microchip USA

USA . 1,403 parts In-Stock

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$47.490

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$46.820

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$46.480

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$46.140

1,403

$47.490

$46.820

$46.480

$46.140

Parana Technologies

USA . 163 parts In-Stock

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$75.358

100+ parts

$6,998.141

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$67.822

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163

$75.358

$6,998.141

$67.822

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DigiPath Technology Company

USA . 1,887 parts In-Stock

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$82.979

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1,887

$82.979

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IDEA Electronic Components Group

UK . 1,770 parts In-Stock

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$84.672

100+ parts

$80.438

1k+ parts

$76.205

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1,770

$84.672

$80.438

$76.205

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ChromeModa Solutions

Germany . 969 parts In-Stock

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$84.672

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$69.431

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969

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$69.431

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QUARKTWIN TECHNOLOGY LTD

USA . 27,945 parts In-Stock

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Corphita

USA . 3,571 parts In-Stock

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3,571

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Overview

Unlock limitless possibilities with the LM3S1165-IBZ50-A2 microcontroller by Texas Instruments. Crafted with precision and reliability, this cutting-edge technology offers unparalleled performance in a wide range of applications. Seamlessly integrating into your projects, this innovative microcontroller delivers exceptional value, efficiency, and flexibility. Trust in Texas Instruments to provide the quality and advantages you need to bring your ideas to life. Experience the benefits and advantages of the LM3S1165-IBZ50-A2 today and revolutionize the way you create.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the microcontroller, ensuring longevity and reliability.

Surface Mount: YES

Allows for easy integration onto circuit boards, saving space and simplifying installation.

Maximum Supply Voltage: 2.75 V

Suitable for low power applications and helps in reducing overall power consumption.

Package Shape: SQUARE

Facilitates easier placement and alignment during manufacturing and assembly processes.

Bit Size: 32

Provides sufficient processing power for various embedded applications requiring complex calculations and data manipulation.

Power Supplies (V): 2.5,3.3

Compatible with commonly used voltage levels in electronic devices, making it versatile for different applications.

No. of Terminals: 108

Offers extensive connectivity options for interfacing with external components and peripherals.

Package Style (Meter): GRID ARRAY

Enables efficient heat dissipation and enhances solder joint reliability for better overall performance.

Minimum Supply Voltage: 2.25 V

Ensures stable operation even under low voltage conditions, improving the reliability of the microcontroller.

Maximum Operating Temperature: 85 °C

Suitable for industrial environments where temperature fluctuations are common, ensuring consistent performance.

Technical Specifications

Microcontrollers LM3S1165-IBZ50-A2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PBGA-B108

JESD-609 Code:

e1

Length:

10 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

43

No. of Terminals:

108

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA108,12X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

16384

ROM Words:

65536

ROM Programmability:

FLASH

Maximum Seated Height:

1.5 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10 mm

Peripheral IC Type:

Trade Compliance

LM3S1165-IBZ50-A2 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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