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LM3S1162-IBZ50-A2T

Texas Instruments

LM3S1162-IBZ50-A2T by Texas Instruments

LM3S1162-IBZ50-A2T by Texas Instruments is a 32-bit microcontroller with 108 terminals, operating at a max frequency of 8.192 MHz. It features 46 I/O lines, FLASH ROM programmability, and ADC channels, making it ideal for industrial applications requiring precise control and data acquisition in a compact package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,445 parts In-Stock

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Digiode

USA . 512 parts In-Stock

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512

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Distributors (Availability)

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AZTECH Wire

Italy . 409 parts In-Stock

1+ parts

$14.359

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409

$14.359

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One Stop Electronics

USA . 991 parts In-Stock

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$31.000

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991

$31.000

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Microchip USA

USA . 3,273 parts In-Stock

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$40.330

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$39.760

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$39.470

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$39.180

3,273

$40.330

$39.760

$39.470

$39.180

Parana Technologies

USA . 518 parts In-Stock

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$67.373

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518

$67.373

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DigiPath Technology Company

USA . 714 parts In-Stock

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$74.186

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$68.251

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714

$74.186

$68.251

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IDEA Electronic Components Group

UK . 2,070 parts In-Stock

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$75.700

100+ parts

$71.915

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$68.130

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2,070

$75.700

$71.915

$68.130

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ChromeModa Solutions

Germany . 1,714 parts In-Stock

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$75.700

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$62.074

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Corphita

USA . 1,484 parts In-Stock

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Overview

Unlock endless possibilities with the LM3S1162-IBZ50-A2T by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments never fails to deliver top-quality microcontrollers that cater to various applications. This powerful 32-bit microcontroller offers unparalleled value and benefits, providing customers with reliable performance and efficiency. Whether you're working on industrial automation, consumer electronics, or any other project, the LM3S1162-IBZ50-A2T is the perfect solution for all your needs. Experience innovation at its finest with this versatile and advanced microcontroller.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used in microcontrollers due to its good thermal and mechanical properties, making the product durable and reliable.

Surface Mount: YES

Surface mount technology allows for compact and lightweight designs, making it easier to integrate this microcontroller into various electronic devices.

Maximum Supply Voltage: 2.75 V

Low maximum supply voltage helps in reducing power consumption and increasing efficiency in battery-powered applications.

Package Shape: SQUARE

Square package shape enables easy placement on circuit boards and efficient use of space in the design layout.

Bit Size: 32

32-bit architecture provides higher processing power, allowing the microcontroller to handle complex tasks efficiently.

Power Supplies (V): 2.5,3.3

Multiple power supply options give flexibility in designing for different voltage requirements and power consumption levels.

No. of Terminals: 108

Having a high number of terminals allows for connectivity to various external components and peripherals, enhancing the functionality of the microcontroller.

Package Style (Meter): GRID ARRAY

Grid array package style provides better mechanical strength and thermal conductivity, ensuring reliability in challenging operating conditions.

Minimum Operating Temperature: -40 °C

Wide temperature range capability makes the microcontroller suitable for use in extreme environments or industrial applications.

ADC Channels: YES

Analog-to-digital converter (ADC) channels enable the microcontroller to interface with analog sensors and signals, expanding its input capabilities.

ROM Words: 65536

Large ROM capacity allows for storing a significant amount of program data and instructions, making the microcontroller versatile in handling diverse applications.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC (Reduced Instruction Set Computing) architecture enhances processing speed and efficiency, making the microcontroller suitable for real-time applications.

RAM Bytes: 16384

Adequate RAM size enables efficient data processing and multitasking capabilities, improving the overall performance of the microcontroller.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the microcontroller energy-efficient and reliable in noise-prone environments.

PWM Channels: YES

Pulse-width modulation (PWM) channels allow for precise control of analog outputs, making the microcontroller ideal for applications requiring modulation and control functionalities.

ROM Programmability: FLASH

Flash programmable ROM provides flexibility in updating firmware and software, allowing for easy maintenance and customization of the microcontroller.

Technical Specifications

Microcontrollers LM3S1162-IBZ50-A2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

8.192 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PBGA-B108

JESD-609 Code:

e1

Length:

10 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

46

No. of Terminals:

108

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA108,12X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

16384

ROM Words:

65536

ROM Programmability:

FLASH

Maximum Seated Height:

1.5 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10 mm

Peripheral IC Type:

Trade Compliance

LM3S1162-IBZ50-A2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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