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LM3S101-EGZ20-C2

Texas Instruments

LM3S101-EGZ20-C2 by Texas Instruments

LM3S101-EGZ20-C2 by Texas Instruments is a 32-bit microcontroller with 3.3V power supply, 2048 bytes of RAM, and 8192 ROM words. It operates in industrial temperatures from -40 to 105°C and features PWM channels for various applications like motor control and automation systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,183 parts In-Stock

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6,183

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Digiode

USA . 4,834 parts In-Stock

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4,834

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Distributors (Availability)

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Parana Technologies

USA . 1,799 parts In-Stock

1+ parts

$13.260

100+ parts

-

1k+ parts

$13.765

10k+ parts

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1,799

$13.260

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$13.765

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AZTECH Wire

Italy . 415 parts In-Stock

1+ parts

$13.675

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415

$13.675

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DigiPath Technology Company

USA . 1,550 parts In-Stock

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$14.601

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$13.433

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1,550

$14.601

$13.433

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ChromeModa Solutions

Germany . 2,019 parts In-Stock

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$14.899

100+ parts

$12.217

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2,019

$14.899

$12.217

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IDEA Electronic Components Group

UK . 1,489 parts In-Stock

1+ parts

$14.899

100+ parts

$14.154

1k+ parts

$13.409

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1,489

$14.899

$14.154

$13.409

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One Stop Electronics

USA . 455 parts In-Stock

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$25.000

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455

$25.000

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Corphita

USA . 3,992 parts In-Stock

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Microchip USA

USA . 1,957 parts In-Stock

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1,957

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Overview

Experience the cutting-edge technology of the LM3S101-EGZ20-C2 by Texas Instruments, a top-of-the-line microcontroller that offers unparalleled quality and reliability. With its advanced features and high-performance capabilities, this product is perfect for a wide range of applications in various industries. Trust in Texas Instruments' reputation for excellence and innovation, and unlock the endless possibilities that this microcontroller has to offer. Elevate your projects to the next level with the LM3S101-EGZ20-C2 and experience the value and benefits it brings to your work.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for the package body, ensuring long-term reliability and portability.

Maximum Supply Voltage: 3.6 V

Provides flexibility in power supply options and can handle higher voltage inputs.

Bit Size: 32

32-bit architecture allows for more complex calculations and operations, increasing processing capabilities.

ROM Words: 8192

Large ROM size allows for storing a significant amount of program data and instructions.

Maximum Operating Temperature: 105 °C

Wide operating temperature range makes it suitable for industrial applications where temperature variations are common.

ADC Channels: YES

Built-in ADC channels enable analog sensing and data conversion, expanding the range of applications for this microcontroller.

RAM Bytes: 2048

Ample RAM capacity for storing and quickly accessing data during program execution, enhancing performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the microcontroller energy-efficient and reliable.

Maximum Clock Frequency: 0.032 MHz

High clock frequency allows for fast processing speeds, improving overall performance.

Technical Specifications

Microcontrollers LM3S101-EGZ20-C2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PQCC-N48

Length:

6.875 mm

No. of I/O Lines:

18

No. of Terminals:

48

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

2048

ROM Words:

8192

ROM Programmability:

FLASH

Maximum Seated Height:

1 mm

Speed:

20 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

50 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6.875 mm

Peripheral IC Type:

Trade Compliance

LM3S101-EGZ20-C2 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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